Epitaxial Engineering of FAPbBr3/FAPbBr3–xClx Heterojunctions for Sensitive X-ray and α-Particle Detection

IF 6.5 1区 物理与天体物理 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY ACS Photonics Pub Date : 2024-11-06 DOI:10.1021/acsphotonics.4c01214
Tongyang Wang, Xin Zhang, Quanchao Zhang, Xin Liu, Haowen Luo, Yingying Hao, Ruichen Bai, Lingyan Xu, Jianxi Liu, Yadong Xu
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Abstract

Halide perovskite crystals have attracted extensive research in the field of radiation detection, thanks to their superior carrier transport abilities and facile solution preparation methods. However, dark current instability is common in perovskite single-crystal devices, especially under high bias voltages. Herein, we achieve the modulation of surface defects by epitaxial growth to obtain heterogeneous crystals with high crystalline quality, developing FAPbBr3/FAPbBr3–xClx heterojunctions to address severely increased dark current. The FAPbBr3/FAPbBr2.7Cl0.3 heterojunction exhibits reduced trap-state density and a significant built-in potential difference. Based on the effective utilization of the dark current cutoff effect of the heterojunctions, a dark current of 0.83 μA·cm–2 is realized for the FAPbBr3/FAPbBr2.7Cl0.3 detector, which is 7.5% of that based on an intrinsic FAPbBr3 single crystal. Thus, an optimal sensitivity of 33612 μC·Gyair–1·cm–2 for Au/FAPbBr3/FAPbBr2.7Cl0.3/Au detector was achieved, at a bias of −250 V. Simultaneously, an energy resolution of 15.2% for 241Am @ 5.49 MeV α-particle-induced pulse height spectra was recognized. Our work not only establishes a new benchmark for FAPbBr3-based perovskite performance but also presents a pragmatic strategy to lower the harmful dark current in three-dimensional halide perovskite single crystals.

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用于灵敏 X 射线和 α 粒子探测的 FAPbBr3/FAPbBr3-xClx 异质结的外延工程设计
卤化物透辉石晶体凭借其卓越的载流子传输能力和简便的溶液制备方法,吸引了辐射探测领域的广泛研究。然而,在过氧化物单晶器件中,暗电流不稳定性很常见,尤其是在高偏置电压下。在这里,我们通过外延生长实现了对表面缺陷的调节,从而获得了具有高结晶质量的异质晶体,开发出了 FAPbBr3/FAPbBr3-xClx 异质结,以解决暗电流严重增加的问题。FAPbBr3/FAPbBr2.7Cl0.3 异质结具有较低的阱态密度和显著的内置电位差。在有效利用异质结暗电流截止效应的基础上,FAPbBr3/FAPbBr2.7Cl0.3 探测器的暗电流为 0.83 μA-cm-2,是基于本征 FAPbBr3 单晶的暗电流的 7.5%。因此,在偏压为 -250 V 时,金/FAPbBr3/FAPbBr2.7Cl0.3/金探测器的最佳灵敏度达到了 33612 μC-Gyair-1-cm-2。同时,241Am @ 5.49 MeV α 粒子诱导脉冲高度谱的能量分辨率达到了 15.2%。我们的工作不仅为基于 FAPbBr3 的包晶性能建立了一个新的基准,而且还提出了一种降低三维卤化物包晶单晶中有害暗电流的实用策略。
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来源期刊
ACS Photonics
ACS Photonics NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.90
自引率
5.70%
发文量
438
审稿时长
2.3 months
期刊介绍: Published as soon as accepted and summarized in monthly issues, ACS Photonics will publish Research Articles, Letters, Perspectives, and Reviews, to encompass the full scope of published research in this field.
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