{"title":"Hetero-Integrated InP RTD-SiGe BiCMOS Source With Fundamental Injection Locking","authors":"E. Mutlu;C. Preuss;F. Vogelsang;R. Kress;J. Bott;B. Sievert;J. Watermann;J. Abts;A. Rennings;D. Erni;N. Pohl;N. Weimann","doi":"10.1109/LMWT.2024.3458196","DOIUrl":null,"url":null,"abstract":"This work shows the hetero-integration of an InP resonant tunneling diode (RTD) on a SiGe-BiCMOS mm-Wave integrated circuit (MMIC) for near-field wireless fundamental injection locking. We observe injection locking within a locking range of 26 GHz and a total power during injection locking of −3.4 dBm. The SiGe-based local oscillator (LO) is integrated with a frequency doubler and an on-chip patch antenna that operates between 220 and 247 GHz, providing a maximum output power of −7 dBm. The LO is near-field coupled to an InP RTD oscillator integrated into a slot antenna which reaches a free running maximum output power of −6.2 dBm. The chip-to-chip integration is carried out through flip-chip bonding.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1278-1281"},"PeriodicalIF":0.0000,"publicationDate":"2024-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10699472","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10699472/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This work shows the hetero-integration of an InP resonant tunneling diode (RTD) on a SiGe-BiCMOS mm-Wave integrated circuit (MMIC) for near-field wireless fundamental injection locking. We observe injection locking within a locking range of 26 GHz and a total power during injection locking of −3.4 dBm. The SiGe-based local oscillator (LO) is integrated with a frequency doubler and an on-chip patch antenna that operates between 220 and 247 GHz, providing a maximum output power of −7 dBm. The LO is near-field coupled to an InP RTD oscillator integrated into a slot antenna which reaches a free running maximum output power of −6.2 dBm. The chip-to-chip integration is carried out through flip-chip bonding.
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