{"title":"Influence of Biaxial and Isotropic Strain on The Thermoelectric Performance of PbSnTeSe High-Entropy Alloy: A Density-Functional Theory Study","authors":"Ming Xia, Pascal Boulet, Marie-Christine Record","doi":"10.1016/j.mtphys.2024.101590","DOIUrl":null,"url":null,"abstract":"Strain engineering is an effective method to improve materials thermoelectric (TE) performance. In this study, both biaxial and isotropic strains ranging from -3% to +3% and from -3% to -1%, respectively, were applied to improve the TE properties of PbSnTeSe high entropy alloy (HEA). The effects of strain on the TE transport properties of PbSnTeSe HEA were investigated using first-principles calculations combined with Boltzmann transport theory. Under biaxial strain, n-type doped PbSnTeSe HEA shows an increase in the optimal power factor (<span><math></math></span>) with both compressive and tensile strains. For p-type doping, compressive strain enhances the <span><math></math></span>, whereas tensile strain reduces it. Within a strain range of -3% to +3%, the optimal <span><math></math></span> are 7.8–9.5 mW/mK<sup>2</sup> for n-type and 0.85–1.3 mW/mK<sup>2</sup> for p-type doped PbSnTeSe HEA. The maximum figure of merit (<span><math></math></span>) value of 1.63 for n-type doped PbSnTeSe HEA at 300 K under 3% tensile strain is 61% higher than the <span><math></math></span> value of 1.1 without strain. Under isotropic strain ranging from 0% to -3%, the <span><math></math></span> increases from 7.8 to 14 mW/mK<sup>2</sup> for n-type and from 1.1 to 3.4 mW/mK<sup>2</sup> for p-type doped PbSnTeSe HEA. Additionally, isotropic strain boosts the maximum <span><math></math></span> value for p-type doped PbSnTeSe HEA at 300 K from 0.3 to 0.85 under -3% strain. This study confirms that strain engineering is an effective strategy to enhance the thermoelectric properties of PbSnTeSe HEA.","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":null,"pages":null},"PeriodicalIF":10.0000,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Today Physics","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1016/j.mtphys.2024.101590","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Strain engineering is an effective method to improve materials thermoelectric (TE) performance. In this study, both biaxial and isotropic strains ranging from -3% to +3% and from -3% to -1%, respectively, were applied to improve the TE properties of PbSnTeSe high entropy alloy (HEA). The effects of strain on the TE transport properties of PbSnTeSe HEA were investigated using first-principles calculations combined with Boltzmann transport theory. Under biaxial strain, n-type doped PbSnTeSe HEA shows an increase in the optimal power factor () with both compressive and tensile strains. For p-type doping, compressive strain enhances the , whereas tensile strain reduces it. Within a strain range of -3% to +3%, the optimal are 7.8–9.5 mW/mK2 for n-type and 0.85–1.3 mW/mK2 for p-type doped PbSnTeSe HEA. The maximum figure of merit () value of 1.63 for n-type doped PbSnTeSe HEA at 300 K under 3% tensile strain is 61% higher than the value of 1.1 without strain. Under isotropic strain ranging from 0% to -3%, the increases from 7.8 to 14 mW/mK2 for n-type and from 1.1 to 3.4 mW/mK2 for p-type doped PbSnTeSe HEA. Additionally, isotropic strain boosts the maximum value for p-type doped PbSnTeSe HEA at 300 K from 0.3 to 0.85 under -3% strain. This study confirms that strain engineering is an effective strategy to enhance the thermoelectric properties of PbSnTeSe HEA.
期刊介绍:
Materials Today Physics is a multi-disciplinary journal focused on the physics of materials, encompassing both the physical properties and materials synthesis. Operating at the interface of physics and materials science, this journal covers one of the largest and most dynamic fields within physical science. The forefront research in materials physics is driving advancements in new materials, uncovering new physics, and fostering novel applications at an unprecedented pace.