Nitrogen-doped carbon quantum dot-decorated In2O3 synaptic transistors for neuromorphic computing

Abstract

Nitrogen-doped carbon quantum dots (N-CQDs) are promising materials for electronic devices due to their variable bandgap and structural stability. Here, we integrate N-CQDs into In2O3 synaptic transistors with electrolyte gating, resulting in a hybrid structure. The surface functional groups and defects of N-CQDs empower the charge trapping mechanism, permitting controlled conduction and charge regulation, which are crucial for emulating linear and symmetric artificial synaptic devices. Devices incorporating N-CQDs demonstrate enhanced stability and memory characteristics, low energy consumption, consistent retention, and a significant hysteresis window across multiple voltage cycles. Finally, the study emulates biological synapses and cognitive functions, achieving an energy consumption of 10 fJ per synaptic event and a pattern recognition accuracy of 91.2% on the MNIST dataset in hardware neural networks. This work demonstrates the potential of well-manipulating charge trapping in N-CQDs to develop high-performance, nonvolatile synaptic devices.