Aaron D. Gilmour, Jameel Sardharwalla, Stuart T. Fraser, Xuege Feng, Sophia C. Franklin, Clara T. H. Tran, Marcela M. M. Bilek
The growth and study of living cells outside their native organisms forms the foundation of modern biology and underpin medicine. It has led to the identification of stem cells and the development of methods that can reprogram mature cells into pluripotent states, creating enormous potential for new therapies that can cure previously untreatable conditions and enable the repair of patient-specific tissues and organs. Accessing these advances, however, will require the development of sophisticated new cell culture materials and technologies. This Perspective article reviews the development of cell culture and current cell culture capabilities, with particular attention to the influence of spatial and temporal factors. We discuss traditional 2D culture, the complexities of 3D systems, and the emergence of 2.5D approaches as an alternative to high throughput 2D systems. Untapped potential and barriers to progress are identified while the new materials and technologies needed to drive the field forward are discussed.
{"title":"Plasma processes for the creation of customizable bio-instructive surfaces and interfaces","authors":"Aaron D. Gilmour, Jameel Sardharwalla, Stuart T. Fraser, Xuege Feng, Sophia C. Franklin, Clara T. H. Tran, Marcela M. M. Bilek","doi":"10.1063/5.0301610","DOIUrl":"https://doi.org/10.1063/5.0301610","url":null,"abstract":"The growth and study of living cells outside their native organisms forms the foundation of modern biology and underpin medicine. It has led to the identification of stem cells and the development of methods that can reprogram mature cells into pluripotent states, creating enormous potential for new therapies that can cure previously untreatable conditions and enable the repair of patient-specific tissues and organs. Accessing these advances, however, will require the development of sophisticated new cell culture materials and technologies. This Perspective article reviews the development of cell culture and current cell culture capabilities, with particular attention to the influence of spatial and temporal factors. We discuss traditional 2D culture, the complexities of 3D systems, and the emergence of 2.5D approaches as an alternative to high throughput 2D systems. Untapped potential and barriers to progress are identified while the new materials and technologies needed to drive the field forward are discussed.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"398 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146115620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Peng-Lei Wang, Yi-Bo Peng, Kai-Li Lin, Zhe-Han Jiang, Baile Chen, Shiyu Hu, Wenxiang Huang, Cheng Wang
Interband cascade lasers (ICLs) are energy-efficient mid-infrared light sources that are grown either on the GaSb substrate or on the InAs substrate. While the dynamical characteristics of GaSb-based ICLs have been well explored, those of InAs-based ICLs have not been revealed yet. This work unveils the linewidth broadening factor (LBF) properties and the relative intensity noise (RIN) characteristics of InAs-based ICLs emitting around 4.6 μm, which produce a continuous wave at room temperature. It is found that the LBF of the InAs-based ICLs is about 1.5, which is smaller than that of GaSb-based ICLs, owing to the higher thermal conductivity and the larger optical confinement factor. The RIN of the InAs-based ICLs reaches below −150 dB/Hz at high pump currents, which is comparable to those of GaSb-based ones.
{"title":"Linewidth broadening factor and relative intensity noise of interband cascade lasers grown on InAs substrate","authors":"Peng-Lei Wang, Yi-Bo Peng, Kai-Li Lin, Zhe-Han Jiang, Baile Chen, Shiyu Hu, Wenxiang Huang, Cheng Wang","doi":"10.1063/5.0304825","DOIUrl":"https://doi.org/10.1063/5.0304825","url":null,"abstract":"Interband cascade lasers (ICLs) are energy-efficient mid-infrared light sources that are grown either on the GaSb substrate or on the InAs substrate. While the dynamical characteristics of GaSb-based ICLs have been well explored, those of InAs-based ICLs have not been revealed yet. This work unveils the linewidth broadening factor (LBF) properties and the relative intensity noise (RIN) characteristics of InAs-based ICLs emitting around 4.6 μm, which produce a continuous wave at room temperature. It is found that the LBF of the InAs-based ICLs is about 1.5, which is smaller than that of GaSb-based ICLs, owing to the higher thermal conductivity and the larger optical confinement factor. The RIN of the InAs-based ICLs reaches below −150 dB/Hz at high pump currents, which is comparable to those of GaSb-based ones.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"59 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146115616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
I. Anderson, J. Kramer, T. H. Hsu, Y. Wang, V. Chulukhadze, R. Lu
Frequency combs consist of a spectrum of evenly spaced spectral lines. Optical frequency combs enable technologies ranging from timing, LiDAR, and ultra-stable signal sources. Microwave frequency combs are analogous to optical frequency combs, but often leverage electronic nonlinearity for comb generation. Generating microwave frequency combs using piezoelectric mechanical resonators would enable this behavior in a more compact form factor, thanks to the shorter acoustic wavelengths. In this work, we demonstrate a microwave frequency comb leveraging thermal nonlinearity in high quality factor (Q), overmoded acoustic resonators in thin-film lithium niobate. By providing input power at 257 MHz, which is the sum frequency of two acoustic modes at 86 and 171 MHz, we generate parametric downconversion and comb generation. We explore the nonlinear mixing regimes and the associated conditions for comb generation. Comb spacing is observed to vary significantly with drive frequency and power, and its general behavior is found to rely heavily on initial conditions. This demonstration showcases the potential for further improvement in compact and efficient microwave frequency combs, leveraging nonlinear acoustic resonators.
{"title":"Phononic combs in lithium niobate acoustic resonators","authors":"I. Anderson, J. Kramer, T. H. Hsu, Y. Wang, V. Chulukhadze, R. Lu","doi":"10.1063/5.0304587","DOIUrl":"https://doi.org/10.1063/5.0304587","url":null,"abstract":"Frequency combs consist of a spectrum of evenly spaced spectral lines. Optical frequency combs enable technologies ranging from timing, LiDAR, and ultra-stable signal sources. Microwave frequency combs are analogous to optical frequency combs, but often leverage electronic nonlinearity for comb generation. Generating microwave frequency combs using piezoelectric mechanical resonators would enable this behavior in a more compact form factor, thanks to the shorter acoustic wavelengths. In this work, we demonstrate a microwave frequency comb leveraging thermal nonlinearity in high quality factor (Q), overmoded acoustic resonators in thin-film lithium niobate. By providing input power at 257 MHz, which is the sum frequency of two acoustic modes at 86 and 171 MHz, we generate parametric downconversion and comb generation. We explore the nonlinear mixing regimes and the associated conditions for comb generation. Comb spacing is observed to vary significantly with drive frequency and power, and its general behavior is found to rely heavily on initial conditions. This demonstration showcases the potential for further improvement in compact and efficient microwave frequency combs, leveraging nonlinear acoustic resonators.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"15 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146115617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yuta Hirasaki, Toshinari Itoko, Naoki Kanazawa, Eiji Saitoh
Recent advances in quantum technology have enabled the simulation of quantum many-body systems on real quantum devices. However, such quantum simulators are inherently subject to decoherence, and their impact on system dynamics—particularly near quantum phase transitions—remains insufficiently understood. In this work, we experimentally investigate how decoherence in quantum devices affects the dynamics of quantum time crystals, using a 156-qubit IBM Quantum system. We find that decoherence shifts the location of critical behavior associated with the phase transition, suggesting that noisy simulations can lead to inaccurate identification of phase boundaries. Our results underscore the importance of understanding and mitigating decoherence to reliably simulate quantum many-body systems on near-term quantum hardware.
{"title":"Shift of quantum critical point of discrete time crystal on a noisy quantum simulator","authors":"Yuta Hirasaki, Toshinari Itoko, Naoki Kanazawa, Eiji Saitoh","doi":"10.1063/5.0303196","DOIUrl":"https://doi.org/10.1063/5.0303196","url":null,"abstract":"Recent advances in quantum technology have enabled the simulation of quantum many-body systems on real quantum devices. However, such quantum simulators are inherently subject to decoherence, and their impact on system dynamics—particularly near quantum phase transitions—remains insufficiently understood. In this work, we experimentally investigate how decoherence in quantum devices affects the dynamics of quantum time crystals, using a 156-qubit IBM Quantum system. We find that decoherence shifts the location of critical behavior associated with the phase transition, suggesting that noisy simulations can lead to inaccurate identification of phase boundaries. Our results underscore the importance of understanding and mitigating decoherence to reliably simulate quantum many-body systems on near-term quantum hardware.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"28 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146116134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Memristive devices are promising candidates for next-generation nonvolatile memory and neuromorphic computing. However, their large-scale integration is hindered by the complexity and cost of conventional fabrication methods. Here, we propose a simplified, single-step method for fabricating lateral Cu/CuxO/Cu memristors based on nano-laser direct writing. By exploiting the thermal gradient of focused laser beam, central oxidation of Cu film is induced, enabling the formation of sub-300 nm CuxO switching layers under ambient conditions. To elucidate the laser–Cu films interaction process, systematic mapping of laser parameters, combined with thermal simulations, revealed that laser power, pulse width, and writing width collectively determine the oxidation extent and device performance. Furthermore, optimized devices illustrate robust bipolar resistive switching with high/low resistance state ratios (∼102), stable endurance over 100 cycles, and reliable conductance retention, which is vital for the modulation of RESET behavior and filament stability. Beyond binary switching, the devices exhibit analog conductance modulation under voltage pulses, demonstrating synaptic plasticity suitable for neuromorphic applications. To some extent, this work highlights nano-laser writing as a scalable, cost-effective strategy for fabricating high-density memristors and offers a promising route toward in situ integration of memristive elements for future brain-inspired electronics.
{"title":"Nanoscale thermal effect induced in situ Cu-based memristor","authors":"Jianxin Lin, Chaoyun Zhang, Tuo Zhang, Shuo Xiang, Songling Xiao, Hao Zhang, Yu Liu, Huachuan Wang, Olcay Kizilaslan, Yicong Huang","doi":"10.1063/5.0301433","DOIUrl":"https://doi.org/10.1063/5.0301433","url":null,"abstract":"Memristive devices are promising candidates for next-generation nonvolatile memory and neuromorphic computing. However, their large-scale integration is hindered by the complexity and cost of conventional fabrication methods. Here, we propose a simplified, single-step method for fabricating lateral Cu/CuxO/Cu memristors based on nano-laser direct writing. By exploiting the thermal gradient of focused laser beam, central oxidation of Cu film is induced, enabling the formation of sub-300 nm CuxO switching layers under ambient conditions. To elucidate the laser–Cu films interaction process, systematic mapping of laser parameters, combined with thermal simulations, revealed that laser power, pulse width, and writing width collectively determine the oxidation extent and device performance. Furthermore, optimized devices illustrate robust bipolar resistive switching with high/low resistance state ratios (∼102), stable endurance over 100 cycles, and reliable conductance retention, which is vital for the modulation of RESET behavior and filament stability. Beyond binary switching, the devices exhibit analog conductance modulation under voltage pulses, demonstrating synaptic plasticity suitable for neuromorphic applications. To some extent, this work highlights nano-laser writing as a scalable, cost-effective strategy for fabricating high-density memristors and offers a promising route toward in situ integration of memristive elements for future brain-inspired electronics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"301 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146116213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jing-Jing He, Ling-Xiao Liu, Qin-Yue Cao, Jun-Yi Gu, Yi-Wen Wu, Yuan-Hao Hu, Min Hua, Jia-Ren Yuan, Yan-Dong Guo, Xiao-Hong Yan
As an indispensable component in magnetic tunnel junction (MTJ) design, the selection and design of barrier materials have attracted extensive research attention. In this study, we construct a Cu/MnBi2Te4/MoSi2N4/MnBi2Te4/Cu MTJ and systematically investigate its spin-dependent electronic transport properties using non-equilibrium Green's function formalism combined with density functional theory. Interestingly, the tunneling magnetoresistance (TMR) undergoes a sign reversal from positive to negative with increasing bias voltage, reaching a remarkable negative TMR of −264%, which shows significant application potential. Through analysis of the transmission spectra, projected local density of states, and comparison with a bilayer h-BN barrier, this unique transport property is attributed to bias-induced barrier tilting, which alters the transmission weights of spin-polarized channels. These findings not only provide insights into resolving read–write path conflicts in magnetoresistive random access memories but also offer guidance for possible experimental exploration of MoSi2N4-based MTJs.
{"title":"Barrier-dependent positive-to-negative tunneling magnetoresistance in MnBi2Te4-based magnetic tunnel junctions","authors":"Jing-Jing He, Ling-Xiao Liu, Qin-Yue Cao, Jun-Yi Gu, Yi-Wen Wu, Yuan-Hao Hu, Min Hua, Jia-Ren Yuan, Yan-Dong Guo, Xiao-Hong Yan","doi":"10.1063/5.0281983","DOIUrl":"https://doi.org/10.1063/5.0281983","url":null,"abstract":"As an indispensable component in magnetic tunnel junction (MTJ) design, the selection and design of barrier materials have attracted extensive research attention. In this study, we construct a Cu/MnBi2Te4/MoSi2N4/MnBi2Te4/Cu MTJ and systematically investigate its spin-dependent electronic transport properties using non-equilibrium Green's function formalism combined with density functional theory. Interestingly, the tunneling magnetoresistance (TMR) undergoes a sign reversal from positive to negative with increasing bias voltage, reaching a remarkable negative TMR of −264%, which shows significant application potential. Through analysis of the transmission spectra, projected local density of states, and comparison with a bilayer h-BN barrier, this unique transport property is attributed to bias-induced barrier tilting, which alters the transmission weights of spin-polarized channels. These findings not only provide insights into resolving read–write path conflicts in magnetoresistive random access memories but also offer guidance for possible experimental exploration of MoSi2N4-based MTJs.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"3 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146116214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yunliang Yue, Min Wang, Yaxuan Liu, Runxi Guo, Han Zhang, Huamu Xie, Yee Sin Ang, Shibo Fang
Hydrostatic deformation is an effective approach for tuning the quantum properties of color centers in diamond, with significant implications for quantum sensing, computing, and communication. Compared to the widely studied nitrogen-vacancy (NV) centers, silicon-vacancy (SiV) centers exhibit more than a tenfold increase in coherent photon emission. In this work, we investigate the effects of hydrostatic pressure and tension on the SiV center in diamond using first-principles calculations with the r2SCAN meta-GGA (Generalized Gradient Approximation) functional. We demonstrate that under hydrostatic tension corresponding to an isotropic expansion exceeding 4%, the SiV center undergoes spontaneous symmetry breaking from the inversion-symmetric D3d structure to the asymmetric C3v configuration, similar to that of the NV center. Within the hydrostatic compression and tension range corresponding to isotropic deformations of −8%–4%, the optical properties and hyperfine parameters of the SiV center change monotonically, indicating promising potential for pressure- or deformation-sensing applications. A microscopic explanation of these trends is provided from an electronic structure perspective. The r2SCAN meta-GGA functional shows high accuracy in calculating hyperfine parameters, in agreement with experimental results. This study enhances our understanding of the optical properties and hyperfine interactions of SiV defects in diamond, laying the groundwork for their potential use in hydrostatic pressure or strain sensing applications.
{"title":"Effects of hydrostatic compression and tension on silicon-vacancy centers in diamond","authors":"Yunliang Yue, Min Wang, Yaxuan Liu, Runxi Guo, Han Zhang, Huamu Xie, Yee Sin Ang, Shibo Fang","doi":"10.1063/5.0300210","DOIUrl":"https://doi.org/10.1063/5.0300210","url":null,"abstract":"Hydrostatic deformation is an effective approach for tuning the quantum properties of color centers in diamond, with significant implications for quantum sensing, computing, and communication. Compared to the widely studied nitrogen-vacancy (NV) centers, silicon-vacancy (SiV) centers exhibit more than a tenfold increase in coherent photon emission. In this work, we investigate the effects of hydrostatic pressure and tension on the SiV center in diamond using first-principles calculations with the r2SCAN meta-GGA (Generalized Gradient Approximation) functional. We demonstrate that under hydrostatic tension corresponding to an isotropic expansion exceeding 4%, the SiV center undergoes spontaneous symmetry breaking from the inversion-symmetric D3d structure to the asymmetric C3v configuration, similar to that of the NV center. Within the hydrostatic compression and tension range corresponding to isotropic deformations of −8%–4%, the optical properties and hyperfine parameters of the SiV center change monotonically, indicating promising potential for pressure- or deformation-sensing applications. A microscopic explanation of these trends is provided from an electronic structure perspective. The r2SCAN meta-GGA functional shows high accuracy in calculating hyperfine parameters, in agreement with experimental results. This study enhances our understanding of the optical properties and hyperfine interactions of SiV defects in diamond, laying the groundwork for their potential use in hydrostatic pressure or strain sensing applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"8 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146115572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiaoyu Zhao, Yang Shen, Kai Gao, Deming Ma, Fengjiao Cheng, Xiangfeng Qi, Shanshan Liu, Zhen Cui, Enling Li
This study delves into the structural characteristics, electronic properties, and application potential of ZnO/Zr2CO2 and ZnO/Hf2CO2 heterojunctions for photodetectors. Through lattice matching and formation energy calculations, the stable structures of the two heterojunctions were determined. The band structures were further calculated under PBE and HSE06 functionals. Subsequently, mechanical properties, −COHP, electron localization function, electrostatic potential, and average charge density were analyzed. The calculations of carrier mobility showed that the electron mobility of ZnO/Hf2CO2 is 25654 cm2/V s in the zigzag direction and 8269 cm2/V s in the armchair direction. The electron mobility of ZnO/Hf2CO2 is much higher than that of ZnO/Zr2CO2, and electrons have a greater migration advantage in the zigzag direction. The two heterojunctions were constructed as self-powered photodetectors, and the photocurrent, Seebeck coefficient, and transmission coefficient were calculated. The photocurrent peak value of ZnO/Zr2CO2 heterojunction is 1.38 a02/photon, and the Seebeck coefficient is 1.50 mV/K. The analysis indicated that ZnO/Hf2CO2 has more stable thermoelectric conversion efficiency over a wide temperature range, while the performance of ZnO/Zr2CO2 can be optimized by adjusting the temperature. These research findings provide an important theoretical basis for designing efficient photovoltaic conversion devices.
{"title":"Design and performance study of high-efficiency self-powered photodetectors based on ZnO/X2CO2 (X = Zr, Hf) heterojunctions","authors":"Xiaoyu Zhao, Yang Shen, Kai Gao, Deming Ma, Fengjiao Cheng, Xiangfeng Qi, Shanshan Liu, Zhen Cui, Enling Li","doi":"10.1063/5.0311023","DOIUrl":"https://doi.org/10.1063/5.0311023","url":null,"abstract":"This study delves into the structural characteristics, electronic properties, and application potential of ZnO/Zr2CO2 and ZnO/Hf2CO2 heterojunctions for photodetectors. Through lattice matching and formation energy calculations, the stable structures of the two heterojunctions were determined. The band structures were further calculated under PBE and HSE06 functionals. Subsequently, mechanical properties, −COHP, electron localization function, electrostatic potential, and average charge density were analyzed. The calculations of carrier mobility showed that the electron mobility of ZnO/Hf2CO2 is 25654 cm2/V s in the zigzag direction and 8269 cm2/V s in the armchair direction. The electron mobility of ZnO/Hf2CO2 is much higher than that of ZnO/Zr2CO2, and electrons have a greater migration advantage in the zigzag direction. The two heterojunctions were constructed as self-powered photodetectors, and the photocurrent, Seebeck coefficient, and transmission coefficient were calculated. The photocurrent peak value of ZnO/Zr2CO2 heterojunction is 1.38 a02/photon, and the Seebeck coefficient is 1.50 mV/K. The analysis indicated that ZnO/Hf2CO2 has more stable thermoelectric conversion efficiency over a wide temperature range, while the performance of ZnO/Zr2CO2 can be optimized by adjusting the temperature. These research findings provide an important theoretical basis for designing efficient photovoltaic conversion devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"287 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146115618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jiajie Zou, Yaqi Shen, Yahua Yuan, Xiaochi Liu, Jian Sun
The reliable integration of high-κ dielectrics within van der Waals (vdW) heterostructures is essential for achieving low-power, high-performance nonvolatile floating gate transistors (FGTs). Here, we demonstrate fully functional vdW FGTs employing thermally oxidized hafnia HfOx from layered HfSe2 as both tunneling and control dielectric layers. A ∼5 nm-thick HfOx layer enables efficient Fowler–Nordheim tunneling at low bias, while a thicker layer of >10 nm serves as a robust gate dielectric, providing efficient gate controllability. The resulting FGTs can be operated with low voltages below 4 V, showing pronounced memory hysteresis, multilevel memory capability, and excellent data retention reaching 104 s. This work establishes a feasible strategy for integrating high-quality ultrathin oxides into 2D heterostructures, providing a promising route toward energy-efficient and high-density nonvolatile memory technologies.
{"title":"Low-voltage multilevel van der Waals floating gate transistors enabled by ultrathin hafnia integration","authors":"Jiajie Zou, Yaqi Shen, Yahua Yuan, Xiaochi Liu, Jian Sun","doi":"10.1063/5.0312685","DOIUrl":"https://doi.org/10.1063/5.0312685","url":null,"abstract":"The reliable integration of high-κ dielectrics within van der Waals (vdW) heterostructures is essential for achieving low-power, high-performance nonvolatile floating gate transistors (FGTs). Here, we demonstrate fully functional vdW FGTs employing thermally oxidized hafnia HfOx from layered HfSe2 as both tunneling and control dielectric layers. A ∼5 nm-thick HfOx layer enables efficient Fowler–Nordheim tunneling at low bias, while a thicker layer of >10 nm serves as a robust gate dielectric, providing efficient gate controllability. The resulting FGTs can be operated with low voltages below 4 V, showing pronounced memory hysteresis, multilevel memory capability, and excellent data retention reaching 104 s. This work establishes a feasible strategy for integrating high-quality ultrathin oxides into 2D heterostructures, providing a promising route toward energy-efficient and high-density nonvolatile memory technologies.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"9 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146115622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Koki Takano, Kohei Yamasue, Toshiaki Kato, Yasuo Cho
The unique electronic and optical properties of atomically thin transition metal dichalcogenides make them promising candidates for advanced device applications. However, their electrical characteristics are strongly influenced by the interfacial and dielectric environments provided by the substrate. To elucidate these substrate-related properties, microscopy techniques with high spatial resolution are essential. Among these techniques, scanning nonlinear dielectric microscopy (SNDM) has emerged as a powerful tool for visualizing dominant carrier distributions in semiconductor materials. In this study, we employ SNDM to investigate two types of mechanically exfoliated WSe2 samples: one supported on a SiO2 substrate and the other suspended over nanoscale Au wires. Our findings reveal spatial and bias-dependent differences in carrier behavior between the two structures. Specifically, the suspended WSe2 exhibits reduced hysteresis and a more symmetric ambipolar response, consistent with the suppression of charge trapping at interface states. To further probe the fast dynamic responses associated with interface states, we also conduct local deep level transient spectroscopy measurements using time-resolved SNDM.
{"title":"Nanoscale carrier distribution and trap dynamics in supported and suspended WSe2 layers studied by scanning nonlinear dielectric microscopy","authors":"Koki Takano, Kohei Yamasue, Toshiaki Kato, Yasuo Cho","doi":"10.1063/5.0309146","DOIUrl":"https://doi.org/10.1063/5.0309146","url":null,"abstract":"The unique electronic and optical properties of atomically thin transition metal dichalcogenides make them promising candidates for advanced device applications. However, their electrical characteristics are strongly influenced by the interfacial and dielectric environments provided by the substrate. To elucidate these substrate-related properties, microscopy techniques with high spatial resolution are essential. Among these techniques, scanning nonlinear dielectric microscopy (SNDM) has emerged as a powerful tool for visualizing dominant carrier distributions in semiconductor materials. In this study, we employ SNDM to investigate two types of mechanically exfoliated WSe2 samples: one supported on a SiO2 substrate and the other suspended over nanoscale Au wires. Our findings reveal spatial and bias-dependent differences in carrier behavior between the two structures. Specifically, the suspended WSe2 exhibits reduced hysteresis and a more symmetric ambipolar response, consistent with the suppression of charge trapping at interface states. To further probe the fast dynamic responses associated with interface states, we also conduct local deep level transient spectroscopy measurements using time-resolved SNDM.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"92 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146115615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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