Electroacoustic imaging is an imaging modality used to detect electric field energy distribution during electroporation, offering valuable guidance for clinical procedures, particularly in deep tissues. Traditionally, single-element piezoelectric transducers or arrays have been employed for this purpose. However, these piezoelectric sensors are sensitive to electromagnetic interference and require physical contact with the sample through a coupling medium, raising concerns for both clinical and preclinical applications. To overcome these limitations, a multi-channel random quadrature ultrasonics system has been developed, enabling non-contact detection of electroacoustic signals. In this study, we demonstrated that this non-contact technique effectively detects electroacoustic signals, identifies electroporation regions, and reconstructs electric energy distribution, offering a promising approach for monitoring electroporation therapy.
{"title":"Non-contact electroacoustic tomography with optical interferometer for electroporation therapy monitoring","authors":"Yifei Xu, Yuchen Song, Leshan Sun, Zhongping Chen, Liangzhong Xiang","doi":"10.1063/5.0244192","DOIUrl":"https://doi.org/10.1063/5.0244192","url":null,"abstract":"Electroacoustic imaging is an imaging modality used to detect electric field energy distribution during electroporation, offering valuable guidance for clinical procedures, particularly in deep tissues. Traditionally, single-element piezoelectric transducers or arrays have been employed for this purpose. However, these piezoelectric sensors are sensitive to electromagnetic interference and require physical contact with the sample through a coupling medium, raising concerns for both clinical and preclinical applications. To overcome these limitations, a multi-channel random quadrature ultrasonics system has been developed, enabling non-contact detection of electroacoustic signals. In this study, we demonstrated that this non-contact technique effectively detects electroacoustic signals, identifies electroporation regions, and reconstructs electric energy distribution, offering a promising approach for monitoring electroporation therapy.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"23 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142988360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Greenfield, C. Bell, F. Faramarzi, C. Kim, R. Basu Thakur, A. Wandui, C. Frez, P. Mauskopf, D. Cunnane
We report on the fabrication and characterization of superconducting magnesium diboride (MgB2) thin films intended for quantum-limited devices based on non-linear kinetic inductance (NLKI) such as parametric amplifiers with either elevated operating temperatures or expanded frequency ranges. In order to characterize the MgB2 material properties, we have fabricated coplanar waveguide (CPW) transmission lines and microwave resonators using ≈40 nm thick MgB2 films with a measured kinetic inductance of ∼5.5 pH/□ and internal quality factors Qi≈3×104 at 4.2 K. We measure the NLKI in MgB2 by applying a DC bias to a 6 cm long by 4 μm wide CPW transmission line and measuring the resulting phase delay caused by the current dependent NLKI. We also measure the current dependent NLKI through CPW resonators that shift down in frequency with increased power applied through the CPW feedline. Using these measurements, we calculate the characteristic non-linear current parameter, I*, for multiple CPW geometries. We find values for corresponding current density, J*=12–22 MA/cm2, and a ratio of the critical current to the non-linear current parameter, IC/I*=0.14–0.26, similar to or higher than values for other superconductors such as NbTiN and TiN.
{"title":"Kinetic inductance and non-linearity of MgB2 films at 4K","authors":"J. Greenfield, C. Bell, F. Faramarzi, C. Kim, R. Basu Thakur, A. Wandui, C. Frez, P. Mauskopf, D. Cunnane","doi":"10.1063/5.0245866","DOIUrl":"https://doi.org/10.1063/5.0245866","url":null,"abstract":"We report on the fabrication and characterization of superconducting magnesium diboride (MgB2) thin films intended for quantum-limited devices based on non-linear kinetic inductance (NLKI) such as parametric amplifiers with either elevated operating temperatures or expanded frequency ranges. In order to characterize the MgB2 material properties, we have fabricated coplanar waveguide (CPW) transmission lines and microwave resonators using ≈40 nm thick MgB2 films with a measured kinetic inductance of ∼5.5 pH/□ and internal quality factors Qi≈3×104 at 4.2 K. We measure the NLKI in MgB2 by applying a DC bias to a 6 cm long by 4 μm wide CPW transmission line and measuring the resulting phase delay caused by the current dependent NLKI. We also measure the current dependent NLKI through CPW resonators that shift down in frequency with increased power applied through the CPW feedline. Using these measurements, we calculate the characteristic non-linear current parameter, I*, for multiple CPW geometries. We find values for corresponding current density, J*=12–22 MA/cm2, and a ratio of the critical current to the non-linear current parameter, IC/I*=0.14–0.26, similar to or higher than values for other superconductors such as NbTiN and TiN.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"27 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142985981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Here, based on first-principles calculations and topological analysis, we show that the spin-polarized topological phase is present in a van der Waals (vdW) heterostructure WSe2/CrI3. We reveal that magnetism induced by proximity effects in the heterostructure breaks the time-reversal symmetry (TRS) and thus induces gapped topological edge states, exhibiting the TRS-breaking quantum spin Hall (QSH) effect. By applying a stress field, the WSe2/CrI3 heterostructure manifests enhanced spin polarization, Rashba splitting, and tunable bandgap. The TRS-breaking QSH effect observed in the WSe2/CrI3 heterostructure exhibits remarkable robustness against interlayer shearing. The distinct anisotropy associated with in-plane strain provides precise manipulation strategies for bandgap engineering. Notably, in-plane tensile strain can significantly increase the nontrivial bandgap by up to 98 meV, suggesting the magnetic WSe2/CrI3 heterostructure represents an outstanding platform for achieving the TRS-breaking QSH effect at room temperature. Our findings provide a theoretical foundation for the development of low-dissipation spintronic nanodevices.
{"title":"Strain manipulation of spin-polarized topological phase in WSe2/CrI3 heterostructure","authors":"Jiali Yang, Fangyang Zhan, Xiaoliang Xiao, Zhikang Jiang, Xin Jin, Rui Wang","doi":"10.1063/5.0246961","DOIUrl":"https://doi.org/10.1063/5.0246961","url":null,"abstract":"Here, based on first-principles calculations and topological analysis, we show that the spin-polarized topological phase is present in a van der Waals (vdW) heterostructure WSe2/CrI3. We reveal that magnetism induced by proximity effects in the heterostructure breaks the time-reversal symmetry (TRS) and thus induces gapped topological edge states, exhibiting the TRS-breaking quantum spin Hall (QSH) effect. By applying a stress field, the WSe2/CrI3 heterostructure manifests enhanced spin polarization, Rashba splitting, and tunable bandgap. The TRS-breaking QSH effect observed in the WSe2/CrI3 heterostructure exhibits remarkable robustness against interlayer shearing. The distinct anisotropy associated with in-plane strain provides precise manipulation strategies for bandgap engineering. Notably, in-plane tensile strain can significantly increase the nontrivial bandgap by up to 98 meV, suggesting the magnetic WSe2/CrI3 heterostructure represents an outstanding platform for achieving the TRS-breaking QSH effect at room temperature. Our findings provide a theoretical foundation for the development of low-dissipation spintronic nanodevices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"8 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142986005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Despite the recent rapid development in the organic–inorganic halide perovskite solar cells (PSCs), the crystalline stability of the perovskite (PVK) material, particularly of the MAPbI3, remains a significant impediment to PSC applications. We proposed that short-term ultraviolet (UV) irradiation under air conditions can stabilize the PVK phase and increases the film crystallinity. Detailed investigations indicated that the electrons can be released from the bridging hydroxyls (OHB) bonds under UV irradiation to generate a small amount of active oxygen (O2−) on the TiO2 film surface, forming stable Pb–O bonds and α phase PVK. A 25% increases in photovoltaic conversion efficiency with a considerable stability, and the device maintains over 90% efficiency after 400 h of storage in N2. This study provides a simple and effective method to produce efficient and stable PSC devices at low cost.
{"title":"Enhanced perovskite crystallinity via short-term ultraviolet irradiation","authors":"Tian Xu, Qianliu Yin, Yanbin Chen, Yutian Liu, Jiuchuan Wang, Meifeng Xu","doi":"10.1063/5.0233262","DOIUrl":"https://doi.org/10.1063/5.0233262","url":null,"abstract":"Despite the recent rapid development in the organic–inorganic halide perovskite solar cells (PSCs), the crystalline stability of the perovskite (PVK) material, particularly of the MAPbI3, remains a significant impediment to PSC applications. We proposed that short-term ultraviolet (UV) irradiation under air conditions can stabilize the PVK phase and increases the film crystallinity. Detailed investigations indicated that the electrons can be released from the bridging hydroxyls (OHB) bonds under UV irradiation to generate a small amount of active oxygen (O2−) on the TiO2 film surface, forming stable Pb–O bonds and α phase PVK. A 25% increases in photovoltaic conversion efficiency with a considerable stability, and the device maintains over 90% efficiency after 400 h of storage in N2. This study provides a simple and effective method to produce efficient and stable PSC devices at low cost.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"83 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142987807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yancheng Wang, Xin Xie, Haobing Zhang, Xintao Fan, Weiwei Wang
Magnetic skyrmions, as topological spin textures, offer great potential for next-generation spintronic applications. Skyrmions in artificially synthesized antiferromagnets (SAFs) are particularly promising due to their ability to suppress the skyrmion Hall effect and achieve faster dynamics, making them highly attractive for spintronic devices. However, the critical current density required to drive SAF skyrmions using spin-transfer torque is significantly higher than in conventional ferromagnetic systems. In this work, we analytically and numerically demonstrate that the critical current density for SAF skyrmions can be significantly reduced by applying distinct currents to different layers within the system. This approach can be applied to periodically pinned skyrmions in SAFs, offering the dual benefits of a suppressed Hall effect and a reduced critical current density. Our findings pave the way for more efficient manipulation of SAF skyrmions in spintronic device architectures.
{"title":"Lowering the skyrmion depinning current in synthetic antiferromagnetic systems","authors":"Yancheng Wang, Xin Xie, Haobing Zhang, Xintao Fan, Weiwei Wang","doi":"10.1063/5.0242419","DOIUrl":"https://doi.org/10.1063/5.0242419","url":null,"abstract":"Magnetic skyrmions, as topological spin textures, offer great potential for next-generation spintronic applications. Skyrmions in artificially synthesized antiferromagnets (SAFs) are particularly promising due to their ability to suppress the skyrmion Hall effect and achieve faster dynamics, making them highly attractive for spintronic devices. However, the critical current density required to drive SAF skyrmions using spin-transfer torque is significantly higher than in conventional ferromagnetic systems. In this work, we analytically and numerically demonstrate that the critical current density for SAF skyrmions can be significantly reduced by applying distinct currents to different layers within the system. This approach can be applied to periodically pinned skyrmions in SAFs, offering the dual benefits of a suppressed Hall effect and a reduced critical current density. Our findings pave the way for more efficient manipulation of SAF skyrmions in spintronic device architectures.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"55 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142987808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
To date, no treatment has been developed for targeted delivery to the inner ear (IE). Sonoporation, a promising drug delivery method, increases the permeability of round window membranes (RWMs), enhancing drug diffusion to the IE. A dedicated ultrasound protocol is essential to treat IE pathologies in combination with sonoporation. In situ acoustic pressure (AP) measurements cannot be used for RWM sonoporation because of the heterogeneous anatomy of the temporal bone. This study aimed to model ultrasound propagation in the IE to ensure adequate AP for RWM sonoporation. The impact of the position of the ultrasound probe relative to the RWM on AP as well as potential temperature increases caused by tissue/ultrasound interaction were investigated. Using MATLAB®, a surgical procedure was simulated based on the computed tomography scans of sheep heads (14 IEs). An ultrasound probe (12.7 mm in diameter, 1 MHz) with a degassed water-filled adapter was placed in front of the RWM. Mechanical properties, such as tissue density, sound speed, and ultrasound attenuation, were computed. Ultrasound propagation was simulated using k-wave. Standing waves can double the AP locally; however, the final AP is comparable to a free water field map when accounting for microbubble-induced attenuation. The angle and distance of the probe relative to the RWM have minimal effect on the AP; the main effect is caused by centering the probe on the RWM. No significant thermal elevation was observed. The developed computational model paves the way for designing an optimal and safe ultrasound protocol for sonoporation-mediated drug delivery into the IE.
{"title":"Numerical modeling of ultrasound propagation in the inner ear for sonoporation-mediated drug delivery","authors":"Fabrice Micaletti, David Bakhos, Jean-Michel Escoffre, Dapeng Li, Ayache Bouakaz, Damien Fouan","doi":"10.1063/5.0239956","DOIUrl":"https://doi.org/10.1063/5.0239956","url":null,"abstract":"To date, no treatment has been developed for targeted delivery to the inner ear (IE). Sonoporation, a promising drug delivery method, increases the permeability of round window membranes (RWMs), enhancing drug diffusion to the IE. A dedicated ultrasound protocol is essential to treat IE pathologies in combination with sonoporation. In situ acoustic pressure (AP) measurements cannot be used for RWM sonoporation because of the heterogeneous anatomy of the temporal bone. This study aimed to model ultrasound propagation in the IE to ensure adequate AP for RWM sonoporation. The impact of the position of the ultrasound probe relative to the RWM on AP as well as potential temperature increases caused by tissue/ultrasound interaction were investigated. Using MATLAB®, a surgical procedure was simulated based on the computed tomography scans of sheep heads (14 IEs). An ultrasound probe (12.7 mm in diameter, 1 MHz) with a degassed water-filled adapter was placed in front of the RWM. Mechanical properties, such as tissue density, sound speed, and ultrasound attenuation, were computed. Ultrasound propagation was simulated using k-wave. Standing waves can double the AP locally; however, the final AP is comparable to a free water field map when accounting for microbubble-induced attenuation. The angle and distance of the probe relative to the RWM have minimal effect on the AP; the main effect is caused by centering the probe on the RWM. No significant thermal elevation was observed. The developed computational model paves the way for designing an optimal and safe ultrasound protocol for sonoporation-mediated drug delivery into the IE.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"37 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142987806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Dan Zhao, Zhangcheng Liu, Wenqian Wang, Zhiwei Chen, Qin Lu, Xiao Wang, Yang Li, Jinping Ao
A metal/n-Ga2O3/p-diamond heterojunction diode with superior high-temperature performance was demonstrated in this work. The p-type diamond was lightly boron doped, and the Ga2O3 film was grown via atomic layer deposition without intentional doping. The forward current density increased with temperature, while the reverse current decreased at elevated temperatures. This behavior was attributed to the distinct carrier ionization dynamics across varying temperature ranges. Under high reverse voltage stress, the reverse current remained relatively stable, with no breakdown occurring up to 498 K. An avalanche breakdown voltage of 186 V at 498 K indicates the diode's robust high-voltage endurance capability. These findings underscore the potential of the metal/n-Ga2O3/p-diamond heterojunction diode for high-temperature and high-voltage applications.
{"title":"High-temperature performance of metal/n-Ga2O3/p-diamond heterojunction diode fabricated by ALD method","authors":"Dan Zhao, Zhangcheng Liu, Wenqian Wang, Zhiwei Chen, Qin Lu, Xiao Wang, Yang Li, Jinping Ao","doi":"10.1063/5.0238924","DOIUrl":"https://doi.org/10.1063/5.0238924","url":null,"abstract":"A metal/n-Ga2O3/p-diamond heterojunction diode with superior high-temperature performance was demonstrated in this work. The p-type diamond was lightly boron doped, and the Ga2O3 film was grown via atomic layer deposition without intentional doping. The forward current density increased with temperature, while the reverse current decreased at elevated temperatures. This behavior was attributed to the distinct carrier ionization dynamics across varying temperature ranges. Under high reverse voltage stress, the reverse current remained relatively stable, with no breakdown occurring up to 498 K. An avalanche breakdown voltage of 186 V at 498 K indicates the diode's robust high-voltage endurance capability. These findings underscore the potential of the metal/n-Ga2O3/p-diamond heterojunction diode for high-temperature and high-voltage applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"28 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142981195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
CsPb(Br1−xIx)3, a mixed-halide all-inorganic perovskite, is a promising light-emitting diode (LED) material due to its impressive performance. It has been demonstrated that the mixing parameter x of halogen composition significantly influences the luminescence efficiency of CsPb(Br1−xIx)3. However, the underlying microscopic mechanisms remain unclear. Using first-principles calculations, we investigate the effects of anion mixing on the radiative and non-radiative recombination properties of perovskite materials. Simulations on the carrier mobility, exciton binding energy, affinity energy, and defect formation energy of the materials in the CsPb(Br1−xIx)3 system collaboratively revealed that a high ratio off Br is associated with enhanced luminescence efficiency. Specifically, CsPb(Br1−xIx)3 exhibits optimal luminescent performance with a 2:1 bromine-to-iodine ratio, while it shows the performance degradation with a 1:1 ratio. The results demonstrate that the ratio of halogen atoms (Br and I) has a significant influence on the LED properties of cesium-based all-inorganic perovskites CsPb(Br1−xIx)3, providing a valuable guide for the experimental preparation of cesium-based all-inorganic perovskites.
{"title":"First-principles study on electronic and optical properties of perovskite light-emitting diodes CsPb(Br1− xIx)3","authors":"Peng Xiong, Jin-Bo Liao, Zhong-Yuan Wang, Qian-He Zuo, Yu Dai, Jian Wu, Chuan-Jia Tong","doi":"10.1063/5.0250664","DOIUrl":"https://doi.org/10.1063/5.0250664","url":null,"abstract":"CsPb(Br1−xIx)3, a mixed-halide all-inorganic perovskite, is a promising light-emitting diode (LED) material due to its impressive performance. It has been demonstrated that the mixing parameter x of halogen composition significantly influences the luminescence efficiency of CsPb(Br1−xIx)3. However, the underlying microscopic mechanisms remain unclear. Using first-principles calculations, we investigate the effects of anion mixing on the radiative and non-radiative recombination properties of perovskite materials. Simulations on the carrier mobility, exciton binding energy, affinity energy, and defect formation energy of the materials in the CsPb(Br1−xIx)3 system collaboratively revealed that a high ratio off Br is associated with enhanced luminescence efficiency. Specifically, CsPb(Br1−xIx)3 exhibits optimal luminescent performance with a 2:1 bromine-to-iodine ratio, while it shows the performance degradation with a 1:1 ratio. The results demonstrate that the ratio of halogen atoms (Br and I) has a significant influence on the LED properties of cesium-based all-inorganic perovskites CsPb(Br1−xIx)3, providing a valuable guide for the experimental preparation of cesium-based all-inorganic perovskites.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"77 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142986028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The crystallographic orientation of perovskite crystals significantly influences their photoelectric performance and associated photovoltaic devices. The classic perovskite (MAPbI3) films based on solution processing usually suffer from chaotic orientations. The impact of preferential crystallographic orientation of MAPbI3 thin films on the carrier transport is still far from being well understood. In comparison with the (011) and (111) facets, our density functional theory results revealed that the hole carrier in the (001) facet exhibits superior carrier transport properties. Herein, the highly oriented (001) FAPbI3 could serve as growth templates and promote the (002) orientations of MAPbI3 perovskite. Furthermore, the p-type doping in MAPbI3 was obtained by controlling the amount of MAI. The (002)-dominated MAPbI3 perovskite with p-type characteristics exhibits exceptional carrier transport properties, thereby enhancing device performance.
{"title":"Realization of p-type MA-based perovskite solar cells based on exposure of the (002) facet","authors":"Sihui Jia, Yixuan Li, Cuina Gao, Guocai Liu, Yingke Ren, Chao He, Xing-Tao An","doi":"10.1063/5.0248954","DOIUrl":"https://doi.org/10.1063/5.0248954","url":null,"abstract":"The crystallographic orientation of perovskite crystals significantly influences their photoelectric performance and associated photovoltaic devices. The classic perovskite (MAPbI3) films based on solution processing usually suffer from chaotic orientations. The impact of preferential crystallographic orientation of MAPbI3 thin films on the carrier transport is still far from being well understood. In comparison with the (011) and (111) facets, our density functional theory results revealed that the hole carrier in the (001) facet exhibits superior carrier transport properties. Herein, the highly oriented (001) FAPbI3 could serve as growth templates and promote the (002) orientations of MAPbI3 perovskite. Furthermore, the p-type doping in MAPbI3 was obtained by controlling the amount of MAI. The (002)-dominated MAPbI3 perovskite with p-type characteristics exhibits exceptional carrier transport properties, thereby enhancing device performance.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"48 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142986029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zhongwei Bai, Xuening Fan, Xiaorui Han, Bingcheng Luo
Cubic barium stannate (BaSnO3) has emerged as a promising platform for optoelectronic devices due to its remarkable room-temperature electron mobility, high transparency, excellent thermal stability, and flexible doping control. In this work, a photonic synaptic device—an image sensor integrating memory and processing—was proposed based on the persistent photoconductivity of oxygen-deficient BaSnO3 thin films. The device demonstrated a light-tunable response, allowing it to replicate key functions of biological synapses. Importantly, this device can be utilized as a reservoir layer in a reservoir computing system, achieving a recognition accuracy of over 90% when identifying handwritten digit images. This work underscores the potential of BaSnO3 for retinomorphic computing applications.
{"title":"Neuromorphic synaptic applications of oxygen-deficient BaSnO3 thin films","authors":"Zhongwei Bai, Xuening Fan, Xiaorui Han, Bingcheng Luo","doi":"10.1063/5.0244406","DOIUrl":"https://doi.org/10.1063/5.0244406","url":null,"abstract":"Cubic barium stannate (BaSnO3) has emerged as a promising platform for optoelectronic devices due to its remarkable room-temperature electron mobility, high transparency, excellent thermal stability, and flexible doping control. In this work, a photonic synaptic device—an image sensor integrating memory and processing—was proposed based on the persistent photoconductivity of oxygen-deficient BaSnO3 thin films. The device demonstrated a light-tunable response, allowing it to replicate key functions of biological synapses. Importantly, this device can be utilized as a reservoir layer in a reservoir computing system, achieving a recognition accuracy of over 90% when identifying handwritten digit images. This work underscores the potential of BaSnO3 for retinomorphic computing applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"20 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142986035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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