{"title":"Emergent metal-insulator transition in Fe-doped LaNiO3 thin films on glass substrate","authors":"A Snehil Naidu, Rini Ganguly","doi":"10.1007/s00339-024-08011-7","DOIUrl":null,"url":null,"abstract":"<div><p>Transition-metal-oxide based perovskites belong to the strongly correlated electron system exhibiting composition dependent metal-insulator transition. Their electronic properties can be tuned by doping them with right material by right amount for application in the diverse areas of material science. This article presents the preparation of crystalline thin films of <i>Fe</i>-doped <i>LaNi</i><sub><i>1-x</i></sub><i>Fe</i><sub><i>x</i></sub><i>O</i><sub><i>3</i></sub> (<i>x</i> = 0, 0.1, 0.2, 0.4) on glass substrate by spin-coating of chemical solutions. Annealing the films at a suitable temperature for optimum time plays a crucial role in obtaining good crystalline samples. We performed structural characterizations of the films using X-ray diffraction spectroscopy, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. Electrical conductivity of the films was measured by four-probe technique at 30˚ C, 50˚ C, 80˚ C, and 100˚ C. We observed a non-ohmic insulating behaviour for the sample with <i>x</i> = 0.4 while all the other films with lower doping level showcased linear voltage-current relationship with metallic temperature dependence.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><img></picture></div></div></figure></div></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"130 12","pages":""},"PeriodicalIF":2.5000,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics A","FirstCategoryId":"4","ListUrlMain":"https://link.springer.com/article/10.1007/s00339-024-08011-7","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Transition-metal-oxide based perovskites belong to the strongly correlated electron system exhibiting composition dependent metal-insulator transition. Their electronic properties can be tuned by doping them with right material by right amount for application in the diverse areas of material science. This article presents the preparation of crystalline thin films of Fe-doped LaNi1-xFexO3 (x = 0, 0.1, 0.2, 0.4) on glass substrate by spin-coating of chemical solutions. Annealing the films at a suitable temperature for optimum time plays a crucial role in obtaining good crystalline samples. We performed structural characterizations of the films using X-ray diffraction spectroscopy, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. Electrical conductivity of the films was measured by four-probe technique at 30˚ C, 50˚ C, 80˚ C, and 100˚ C. We observed a non-ohmic insulating behaviour for the sample with x = 0.4 while all the other films with lower doping level showcased linear voltage-current relationship with metallic temperature dependence.
基于过渡金属氧化物的过氧化物属于强相关电子系统，表现出与成分相关的金属-绝缘体转变。可以通过适量掺杂合适的材料来调整它们的电子特性，从而应用于材料科学的各个领域。本文介绍了通过化学溶液旋涂法在玻璃基底上制备掺杂铁的 LaNi1-xFexO3 （x = 0、0.1、0.2、0.4）结晶薄膜的过程。在合适的温度和最佳的时间内对薄膜进行退火对获得良好的结晶样品起着至关重要的作用。我们使用 X 射线衍射光谱仪、扫描电子显微镜和能量色散 X 射线光谱仪对薄膜进行了结构表征。在 30˚ C、50˚ C、80˚ C 和 100˚ C 温度条件下，我们使用四探针技术测量了薄膜的电导率。我们观察到 x = 0.4 的样品具有非欧姆绝缘行为，而掺杂水平较低的所有其他薄膜都显示出线性电压-电流关系，并具有金属温度依赖性。
期刊介绍：
Applied Physics A publishes experimental and theoretical investigations in applied physics as regular articles, rapid communications, and invited papers. The distinguished 30-member Board of Editors reflects the interdisciplinary approach of the journal and ensures the highest quality of peer review.
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