Carrier behavior of a carbon material assisted TIPS-pentacene composite film for improvement of electrical conductivity

IF 3.9 3区 化学 Q2 CHEMISTRY, MULTIDISCIPLINARY RSC Advances Pub Date : 2024-11-13 DOI:10.1039/D4RA06312K
Moonjeong Bok, Ju Ho Lee, Kanghee Won and Eunju Lim
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Abstract

Organic semiconductor devices have a lower intrinsic carrier density than inorganic semiconductors, and improving their electrical conductivity is important for organic electronic devices. Further theoretical investigations and understanding the properties of these electronic devices are necessary to improve the electrical conductivity of organic devices. In this study, we demonstrate how two carbon-material-assisted organic semiconductor devices affect the electrical conductivity and charge mechanism by using electrical measurements (i.e., IV and CV measurements, and numerical simulations). To clearly demonstrate the enhancement of the charge injection into TIPS (6,13-bis(triisopropylsilylethynyl)-pentacene), we studied the blending effect of carbon materials (carbon nanotube and fullerene) in TIPS and discussed injection, transport and charge accumulation of hole and electron in relation to trapped charge. This study will be helpful for understanding charge mechanisms in composite organic semiconductor devices.

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碳材料辅助 TIPS 五聚烯复合薄膜的载流子行为,以提高导电性能
与无机半导体相比,有机半导体器件的本征载流子密度较低,因此提高其导电性对有机电子器件非常重要。为了提高有机器件的导电性,有必要进一步开展理论研究并了解这些电子器件的特性。在本研究中,我们通过电学测量(即 I-V 和 C-V 测量以及数值模拟)展示了两种碳材料辅助的有机半导体器件如何影响导电性和电荷机制。为了清楚地证明电荷注入 TIPS(6,13-双(三异丙基硅基乙炔基)-并五苯)的增强效果,我们研究了碳材料(碳纳米管和富勒烯)在 TIPS 中的混合效应,并讨论了空穴和电子的注入、传输和电荷积累与捕获电荷的关系。这项研究将有助于理解复合有机半导体器件中的电荷机制。
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来源期刊
RSC Advances
RSC Advances chemical sciences-
CiteScore
7.50
自引率
2.60%
发文量
3116
审稿时长
1.6 months
期刊介绍: An international, peer-reviewed journal covering all of the chemical sciences, including multidisciplinary and emerging areas. RSC Advances is a gold open access journal allowing researchers free access to research articles, and offering an affordable open access publishing option for authors around the world.
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