Influence of the Carrier Gas Flow in the CVD Synthesis of 2-Dimensional MoS2 Based on the Spin-Coating of Liquid Molybdenum Precursors.

Abstract

Atomically thin molybdenum disulfide (MoS₂) is a two-dimensional semiconductor with versatile applications. The recent adoption of liquid molybdenum precursors in chemical vapor deposition has contributed significantly to the reproducible wafer-scale synthesis of MoS₂ monolayer and few-layer films. In this work, we study the effects of the carrier gas flow rate on the properties of two-dimensional molybdenum disulfide grown by liquid-precursor-intermediate chemical vapor deposition on SiO₂/Si substrates. We characterized the samples using Optical Microscopy, Scanning Electron Microscopy, Raman spectroscopy, and Photoluminescence spectroscopy. We analyzed samples grown with different nitrogen carrier flows, ranging from 150 to 300 sccm, and discussed the effect of carrier gas flows on their properties. We found a correlation between MoS₂ flake lateral size, shape, and number of layers, and we present a qualitative growth model based on changes in sulfur provision caused by different carrier flows. We show how the use of liquid precursors can allow for the synthesis of homogeneous, single-layer flakes up to 100 µm in lateral size by optimizing the gas flow rate. These results are essential for gaining a deeper understanding of the growth process of MoS₂.