Hang Liao, Zheyang Zheng, Li Zhang, Tao Chen, Yan Cheng, Kevin J. Chen
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引用次数: 0
Abstract
A 600-V p-GaN gate double channel HEMT (DC-HEMT) is presented with a systematic investigation of the gate characteristics, including the leakage current, breakdown, and reliability under forward bias stress. It is found that the gate leakage of the DC-HEMT is substantially lower than that of the p-GaN single channel HEMT (SC-HEMT) owing to suppressed electron spillover that stems from hole storage in the quantum well upper channel. Consequently, the gate breakdown voltage of the DC-HEMT is improved to 14.7 V compared to 12.2 V of the SC-HEMT. Besides, the gate operating voltage margin of the DC-HEMT is expanded to 4.2 V compared to 3.3 V of the SC-HEMT according to the gate lifetime evaluation.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
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