Microwave and Millimeter-Wave GaN and GaAs ICs: High performance from 1 to 100 GHz

Zoya Popović
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Abstract

This paper presents an overview of microwave and millimeter-wave III-V semiconductor circuits designed by graduate students as a part of their training. The monolithic microwave integrated circuits (MMICs) are designed for a wide range of applications, ranging from an on-chip GaAs Dicke radiometer at 1.4 GHz for non-invasive internal body temperature measurements, to a transmit-receive GaN chip from 75-110 GHz with about 1W of maximum output power and a minimum noise figure of 4.2 dB in transmit and receive mode, respectively. Several other circuits are briefly discussed, e.g. high-efficiency transmitters for high peak-to-average ratio (PAPR) signals and rectifying arrays for wireless power reception.
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微波和毫米波氮化镓和砷化镓集成电路:1 至 100 千兆赫的高性能
本文概述了研究生在培训过程中设计的微波和毫米波 III-V 半导体电路。这些单片微波集成电路(MMIC)的设计应用广泛,从用于无创体内温度测量的 1.4 GHz 片上砷化镓 Dicke 辐射计,到 75-110 GHz 的发射接收 GaN 芯片,其最大输出功率约为 1W,发射和接收模式下的最小噪声系数分别为 4.2 dB。此外,还简要讨论了其他几种电路,例如用于高峰均值比(PAPR)信号的高效发射器和用于无线功率接收的整流阵列。
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