Atomic Layer Deposition of ZnO on CsPbBr3 Perovskite Nanocrystals: Surface-Dependent Mechanistic Insights

IF 4.8 2区 化学 Q2 CHEMISTRY, PHYSICAL The Journal of Physical Chemistry Letters Pub Date : 2024-11-07 DOI:10.1021/acs.jpclett.4c0273710.1021/acs.jpclett.4c02737
Min Ju Kim, Min Seok Kim, Ju Young Woo* and Seong-Yong Cho*, 
{"title":"Atomic Layer Deposition of ZnO on CsPbBr3 Perovskite Nanocrystals: Surface-Dependent Mechanistic Insights","authors":"Min Ju Kim,&nbsp;Min Seok Kim,&nbsp;Ju Young Woo* and Seong-Yong Cho*,&nbsp;","doi":"10.1021/acs.jpclett.4c0273710.1021/acs.jpclett.4c02737","DOIUrl":null,"url":null,"abstract":"<p >In this study, we investigate the atomic layer deposition (ALD) process on all-inorganic CsPbBr<sub>3</sub> perovskite nanocrystals (PNCs) to introduce an inorganic electron transport layer (ETL) in light-emitting diode (LED) devices. Two types of CsPbBr<sub>3</sub> PNCs were synthesized with oleate (OA) and oleylammonium (OLA) ligands on the surface. We found that CsPbBr<sub>3</sub> PNCs with Cs oleate surfaces experienced severe photoluminescence (PL) quenching after the ALD process, while those with oleylammonium bromide surfaces did not show any significant PL drop. Transmission electron microscopy and X-ray photoelectron spectroscopy revealed that significant Pb metal formation and Ruddlesden–Popper planar faults, linked to uncoordinated Pb<sup>2+</sup> ion defects, were generated in CsPbBr<sub>3</sub> PNCs terminated with Cs oleate after ALD ZnO. Finally, we fabricated LEDs using PNCs with an ALD ZnO process to introduce inorganic ZnMgO nanoparticles as the ETL. The devices processed with ALD exhibited superior luminance and external quantum efficiency compared to those without the ALD process. This research provides crucial insights into the surface-dependent chemistry of PNCs and the surface-dependent performance of perovskite-based optoelectronic devices.</p>","PeriodicalId":62,"journal":{"name":"The Journal of Physical Chemistry Letters","volume":"15 45","pages":"11437–11444 11437–11444"},"PeriodicalIF":4.8000,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Journal of Physical Chemistry Letters","FirstCategoryId":"1","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acs.jpclett.4c02737","RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

Abstract

In this study, we investigate the atomic layer deposition (ALD) process on all-inorganic CsPbBr3 perovskite nanocrystals (PNCs) to introduce an inorganic electron transport layer (ETL) in light-emitting diode (LED) devices. Two types of CsPbBr3 PNCs were synthesized with oleate (OA) and oleylammonium (OLA) ligands on the surface. We found that CsPbBr3 PNCs with Cs oleate surfaces experienced severe photoluminescence (PL) quenching after the ALD process, while those with oleylammonium bromide surfaces did not show any significant PL drop. Transmission electron microscopy and X-ray photoelectron spectroscopy revealed that significant Pb metal formation and Ruddlesden–Popper planar faults, linked to uncoordinated Pb2+ ion defects, were generated in CsPbBr3 PNCs terminated with Cs oleate after ALD ZnO. Finally, we fabricated LEDs using PNCs with an ALD ZnO process to introduce inorganic ZnMgO nanoparticles as the ETL. The devices processed with ALD exhibited superior luminance and external quantum efficiency compared to those without the ALD process. This research provides crucial insights into the surface-dependent chemistry of PNCs and the surface-dependent performance of perovskite-based optoelectronic devices.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
CsPbBr3 Perovskite 纳米晶体上的氧化锌原子层沉积:表面依赖性机理透视
在本研究中,我们研究了全无机 CsPbBr3 包晶石纳米晶体(PNCs)上的原子层沉积(ALD)工艺,以便在发光二极管(LED)器件中引入无机电子传输层(ETL)。我们合成了两种表面带有油酸(OA)和油铵(OLA)配体的 CsPbBr3 PNCs。我们发现,具有油酸铯表面的 CsPbBr3 PNC 在 ALD 过程后出现了严重的光致发光(PL)淬灭现象,而具有油基溴化铵表面的 PNC 则没有出现任何明显的 PL 下降。透射电子显微镜和 X 射线光电子能谱显示,在 ALD ZnO 之后,用油酸铯终止的 CsPbBr3 PNC 中产生了明显的 Pb 金属形成和 Ruddlesden-Popper 平面疵点,这与未配位的 Pb2+ 离子缺陷有关。最后,我们使用 PNC 制作了 LED,并采用 ALD ZnO 工艺引入无机 ZnMgO 纳米粒子作为 ETL。与未采用 ALD 工艺的器件相比,采用 ALD 工艺的器件显示出更高的亮度和外部量子效率。这项研究为了解 PNCs 的表面化学性质和基于包晶的光电器件的表面性能提供了重要的启示。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
The Journal of Physical Chemistry Letters
The Journal of Physical Chemistry Letters CHEMISTRY, PHYSICAL-NANOSCIENCE & NANOTECHNOLOGY
CiteScore
9.60
自引率
7.00%
发文量
1519
审稿时长
1.6 months
期刊介绍: The Journal of Physical Chemistry (JPC) Letters is devoted to reporting new and original experimental and theoretical basic research of interest to physical chemists, biophysical chemists, chemical physicists, physicists, material scientists, and engineers. An important criterion for acceptance is that the paper reports a significant scientific advance and/or physical insight such that rapid publication is essential. Two issues of JPC Letters are published each month.
期刊最新文献
Different Photodissociation Mechanisms in Fe(CO)5 and Cr(CO)6 Evidenced with Femtosecond Valence Photoelectron Spectroscopy and Excited-State Molecular Dynamics Simulations Protonation Weakens the Influence of Ribose on Triplet Decay of 2-Thiocytidine Ion Diffusion Reveals Heterogeneous Viscosity in Nanostructured Ionic Liquids Controlling the Selectivity of Reaction Products by Transmetalation on a Ag(111) Substrate Upconversion on the Micrometer Scale: Impact of Local Heterogeneity
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1