High Total Ionizing Dose Effects on Backside-Illuminated CMOS Image Sensors

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Nuclear Science Pub Date : 2024-09-23 DOI:10.1109/TNS.2024.3466180
Bingkai Liu;Yudong Li;Lin Wen;Jie Feng;Yulong Cai;Qi Guo
{"title":"High Total Ionizing Dose Effects on Backside-Illuminated CMOS Image Sensors","authors":"Bingkai Liu;Yudong Li;Lin Wen;Jie Feng;Yulong Cai;Qi Guo","doi":"10.1109/TNS.2024.3466180","DOIUrl":null,"url":null,"abstract":"We recently evaluate the high total ionizing dose (TID) effects on 0.18-\n<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>\nm backside-illuminated CMOS image sensors (BSI CISs) with different epitaxial layer thicknesses and backside oxide passivation techniques. \n<inline-formula> <tex-math>$\\gamma $ </tex-math></inline-formula>\n-irradiated device exhibits a huge dark current increase and quantum efficiency (QE) degradation. Moreover, a significant dark current nonuniformity on the whole array is observed at high TID. Results show that the BSI CIS does not capture images and all the functionality is lost after 4 Mrad(SiO2). It is observed that BSI CIS using Al2O3 film as the passivation technique is proven to be more efficient in mitigating high TID effects compared to the imagers using boron implant, suggesting that passivation technique options play a crucial role in determining the performance of BSI CIS at high TID level.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 11","pages":"2393-2399"},"PeriodicalIF":1.9000,"publicationDate":"2024-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nuclear Science","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10689447/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

We recently evaluate the high total ionizing dose (TID) effects on 0.18- $\mu $ m backside-illuminated CMOS image sensors (BSI CISs) with different epitaxial layer thicknesses and backside oxide passivation techniques. $\gamma $ -irradiated device exhibits a huge dark current increase and quantum efficiency (QE) degradation. Moreover, a significant dark current nonuniformity on the whole array is observed at high TID. Results show that the BSI CIS does not capture images and all the functionality is lost after 4 Mrad(SiO2). It is observed that BSI CIS using Al2O3 film as the passivation technique is proven to be more efficient in mitigating high TID effects compared to the imagers using boron implant, suggesting that passivation technique options play a crucial role in determining the performance of BSI CIS at high TID level.
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高总电离剂量对背照式 CMOS 图像传感器的影响
最近,我们评估了高总电离剂量(TID)对采用不同外延层厚度和背面氧化物钝化技术的0.18- $\mu $ m背照式CMOS图像传感器(BSI CIS)的影响。 辐照器件的暗电流大幅增加,量子效率(QE)下降。此外,在高 TID 时,整个阵列上会出现明显的暗电流不均匀现象。结果表明,BSI CIS 无法捕捉图像,并且在 4 Mrad(SiO2) 之后会丧失所有功能。与使用硼植入物的成像器相比,使用 Al2O3 薄膜作为钝化技术的 BSI CIS 被证明能更有效地减轻高 TID 的影响,这表明钝化技术的选择在决定 BSI CIS 在高 TID 水平下的性能方面起着至关重要的作用。
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来源期刊
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science 工程技术-工程:电子与电气
CiteScore
3.70
自引率
27.80%
发文量
314
审稿时长
6.2 months
期刊介绍: The IEEE Transactions on Nuclear Science is a publication of the IEEE Nuclear and Plasma Sciences Society. It is viewed as the primary source of technical information in many of the areas it covers. As judged by JCR impact factor, TNS consistently ranks in the top five journals in the category of Nuclear Science & Technology. It has one of the higher immediacy indices, indicating that the information it publishes is viewed as timely, and has a relatively long citation half-life, indicating that the published information also is viewed as valuable for a number of years. The IEEE Transactions on Nuclear Science is published bimonthly. Its scope includes all aspects of the theory and application of nuclear science and engineering. It focuses on instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.
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