Understanding the nature of the adsorption of Zn(II)/Si(IV) phthalocyanines on anatase TiO2 and rutile SnO2

IF 2.1 4区 化学 Q4 BIOCHEMISTRY & MOLECULAR BIOLOGY Journal of Molecular Modeling Pub Date : 2024-11-18 DOI:10.1007/s00894-024-06211-9
Michael Zambrano-Angulo, Gloria Cárdenas-Jirón
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Abstract

Context

The zinc (II) and silicon (IV) phthalocyanine adsorption on a TiO2 and SnO2 semiconductor surface was investigated using the density functional theory. Several effects were studied: the semiconductor (TiO2, SnO2), the central metal atom in the phthalocyanine (Zn, Si), the substituent groups in the phthalocyanine, and the anchor group (anhydrous, carboxyl) connecting the phthalocyanine with the semiconductor. The application of methodologies to study the intermolecular interactions predicted a stronger zinc and silicon phthalocyanine adsorption with carboxyl than anhydrous. Adsorption energies for phthalocyanines anchored by a carboxyl group indicate a stronger adsorption for TiO2 than for SnO2 with energy differences of up to 7 eV. The presence of coordinative and more van der Waals interactions in TiO2 can explain this. This work is carried out to understand the interaction between phthalocyanines and the semiconductor surface, a crucial aspect of the efficient performance of solar cells.

Methods

We modeled two semiconductor surfaces in extended configuration (TiO2 and SnO2), which were optimized with the GGA-PBE exchange–correlation functional for solids, including the Grimme’s correction dispersion (D3). The meta-GGA TB09LDA exchange–correlation functional was employed to calculate the band gap energy of the semiconductors. The adsorption energies of the phthalocyanines adsorbed on the semiconductors were determined with GGA-PBE-D3 and corrected by the counterpoise method. The nature of the intermolecular interactions in the adsorption was analyzed using the non-covalent interactions (NCI) based on the promolecular approximation of electron density. These interactions were quantifiable by employing the intrinsic bond strength index (IBSI). We used the QuantumATK and the Multiwfn packages for all the calculations.

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了解锐钛型二氧化钛和金红石型二氧化硒上 Zn(II)/Si(IV) 酞菁的吸附性质。
背景:利用密度泛函理论研究了酞菁锌(II)和硅(IV)在 TiO2 和 SnO2 半导体表面的吸附情况。研究了几种效应:半导体(TiO2、SnO2)、酞菁中的中心金属原子(Zn、Si)、酞菁中的取代基以及连接酞菁和半导体的锚基(无水基、羧基)。应用研究分子间相互作用的方法预测,锌和硅酞菁与羧基的吸附力强于与无水基的吸附力。由羧基锚定的酞菁的吸附能表明,对二氧化钛的吸附比对二氧化锡的吸附更强,能量差异高达 7 eV。二氧化钛中存在配位和更多的范德华相互作用可以解释这一点。这项研究旨在了解酞菁与半导体表面之间的相互作用,这是太阳能电池高效性能的一个重要方面:我们模拟了两个扩展构型的半导体表面(TiO2 和 SnO2),并使用 GGA-PBE 固体交换相关函数(包括 Grimme 修正分散 (D3))对其进行了优化。元 GGA TB09LDA 交换相关函数用于计算半导体的带隙能。用 GGA-PBE-D3 测定了吸附在半导体上的酞菁的吸附能,并用反相法进行了校正。根据电子密度的原分子近似法,利用非共价相互作用(NCI)分析了吸附过程中分子间相互作用的性质。这些相互作用可通过本征键强度指数(IBSI)进行量化。我们使用 QuantumATK 和 Multiwfn 软件包进行了所有计算。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Molecular Modeling
Journal of Molecular Modeling 化学-化学综合
CiteScore
3.50
自引率
4.50%
发文量
362
审稿时长
2.9 months
期刊介绍: The Journal of Molecular Modeling focuses on "hardcore" modeling, publishing high-quality research and reports. Founded in 1995 as a purely electronic journal, it has adapted its format to include a full-color print edition, and adjusted its aims and scope fit the fast-changing field of molecular modeling, with a particular focus on three-dimensional modeling. Today, the journal covers all aspects of molecular modeling including life science modeling; materials modeling; new methods; and computational chemistry. Topics include computer-aided molecular design; rational drug design, de novo ligand design, receptor modeling and docking; cheminformatics, data analysis, visualization and mining; computational medicinal chemistry; homology modeling; simulation of peptides, DNA and other biopolymers; quantitative structure-activity relationships (QSAR) and ADME-modeling; modeling of biological reaction mechanisms; and combined experimental and computational studies in which calculations play a major role.
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