Fine structural analysis of red beryl from Utah, USA using anomalous X-ray scattering

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY Journal of Crystal Growth Pub Date : 2024-10-20 DOI:10.1016/j.jcrysgro.2024.127943

Y. Kodama , T. Kawamata , S. Imashuku , K. Sugiyama , T. Mikouchi

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Abstract

The fine structure of red beryl from Utah, USA was analyzed using anomalous X-ray scattering measurements at the Fe K-absorption edge. The resultant Fe distribution map indicated the presence of Fe at the octahedral site. Ordinary single-crystal X-ray diffraction indicated that alkali cations were located in the interstitial area produced by the six-membered ring of SiO_4, as well as partial substitution at the parent octahedral Al site by cations such as those of Fe, Mn, and Mg. X-ray near-edge absorption structural analysis for Mn and Fe indicated that they existed predominantly in the trivalent state as Mn³⁺ and Fe³⁺, respectively. Based on the results obtained from electron probe microanalysis and laser-induced breakdown spectroscopy, the structural formula of red beryl from Utah, USA was concluded to be (Na_0.006K_0.019Rb_0.009Cs_0.009)Be₃ (Al_1.797Fe_0.140Mn_0.036Mg_0.015Zn_0.011)Si₆O₁₈.

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利用反常 X 射线散射对美国犹他州出产的红色绿柱石进行精细结构分析

通过在铁的 K-吸收边缘进行反常 X 射线散射测量，分析了美国犹他州红色绿柱石的精细结构。由此得出的铁分布图表明，八面体部位存在铁。普通单晶 X 射线衍射表明，碱阳离子位于 SiO4 的六元环产生的间隙区域，以及母八面体 Al 位点被 Fe、Mn 和 Mg 等阳离子部分取代。对 Mn 和 Fe 的 X 射线近边吸收结构分析表明，它们主要以三价状态存在，分别为 Mn3+ 和 Fe3+。根据电子探针显微分析和激光诱导击穿光谱分析的结果，得出美国犹他州红色绿柱石的结构式为(Na0.006K0.019Rb0.009Cs0.009)Be3 (Al1.797Fe0.140Mn0.036Mg0.015Zn0.011)Si6O18。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.