Fokker-Planck equation for the crystal-size probability density in progressive nucleation and growth with application to lognormal, Gaussian and gamma distributions
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引用次数: 0
Abstract
The Fokker Planck (FP) equation for the probability density function (PDF) of crystal size in phase transformations ruled by progressive nucleation and growth, has been derived. Crystals are grouped in sub-sets, we refer to as -crystals, where is the birth time of the set. It is shown that the size PDF is the superposition of the PDF of the crystal sub-sets (-PDFs), with weight given by the nucleation rate. The growth and diffusion coefficients entering the FP equations are estimated as a function of both -PDFs and nucleation rate. The functional form of these coefficients is studied for solutions of the FP equation for -crystals given by the lognormal, Gaussian and gamma distributions. For the first two distributions, the effect of fluctuations, nucleation rate and growth rate, on the shape of the distribution has been investigated. It is shown that for an exponential decay of the fluctuation term, the shape of the PDF is mainly governed by both the time constant for nucleation and the strength of the fluctuation. It is found that -PDFs given by the one-parameter gamma distributions are suitable to deal with KJMA (Kolmogorov Johnson Mehl Avrami) compliant phase transformations, where the fluctuation term is proportional to crystal size. The connection between the FP equation for the size PDF and the evolution equation for the density of crystal populations is also discussed.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.