Study and analysis of a dielectric-modulated vertical tunnel FET biosensor using dual material gate

IF 3 Q2 PHYSICS, CONDENSED MATTER Micro and Nanostructures Pub Date : 2024-12-01 Epub Date: 2024-11-02 DOI:10.1016/j.micrna.2024.208016

Haiwu Xie , Yankun Wang , Yongbo Liao

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Abstract

A bimetal gate heterogeneous dielectric vertical tunnel field-effect transistor (BG-HD-VTFET) biosensor has been investigated in this paper for the first time using engineered-gate concept, where nanogaps are introduced under tunnel gate (TG) to detect biomolecules near the device surface. To improve the detection performance of BG-HD-VTFET, an overlap is designed between source and pocket region, and the sensing ability of BG-HD-VTFET with and without overlap is compared in details. Further, an auxiliary gate (AG) is added for the proposed two devices to optimize the electrical characteristics, and the y composition of GaAs_ySb_1-y in pocket region is optimized to enhance ON-state current, and then different neutral and charged biomolecules are considered to simulate device-level gate effects. In addition, the influence of different dielectric constant at fixed charge density is studied and the length of overlap is optimized. Simulation results show that the maximum sensitivity of BG-HD-VTFET with and without overlap can reach 3.3 × 10³ and 1.9 × 10³, respectively.

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使用双材料栅极的介电调制垂直隧道场效应晶体管生物传感器的研究与分析

本文首次采用工程栅极概念研究了一种双金属栅极异质介质垂直隧道场效应晶体管（BG-HD-VTFET）生物传感器，在隧道栅极（TG）下引入纳米间隙以检测器件表面附近的生物分子。为了提高 BG-HD-VTFET 的检测性能，在源区和口袋区之间设计了一个重叠区，并详细比较了有重叠区和无重叠区 BG-HD-VTFET 的传感能力。此外，还为所提出的两个器件增加了一个辅助栅极（AG）以优化电气特性，并优化了口袋区 GaAsySb1-y 的 y 成分以增强导通电流，然后考虑了不同的中性和带电生物分子以模拟器件级栅极效应。此外，还研究了固定电荷密度下不同介电常数的影响，并优化了重叠长度。模拟结果表明，有重叠和无重叠的 BG-HD-VTFET 的最大灵敏度分别可达 3.3 × 103 和 1.9 × 103。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Micro and Nanostructures

CiteScore

6.50

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