{"title":"Photoluminiscence and absorption of emission by phonons of indirect transitions in layered GaS single crystals","authors":"E. Cristea , A.V. Tiron , E.V. Rusu , A.V. Dorogan , V.V. Zalamai","doi":"10.1016/j.optmat.2024.116395","DOIUrl":null,"url":null,"abstract":"<div><div>Absorption in E||b and E⊥c polarizations and photoluminescence at the absorption edge were studied at temperatures range 10–300 K. It was found that the smallest indirect transitions take place from the minimum of conduction band <strong><em>C</em></strong><sub><strong><em>1</em></strong></sub> (point <strong><em>M</em></strong>) to the maximum of valence band <strong><em>V</em></strong><sub><strong><em>1</em></strong></sub> in the Brillouin zone center (point <strong><em>Γ</em></strong> or nearby). A distance between these extrema is 2.4484 eV at 10 K. In addition, the magnitude of indirect transitions from the second band <strong><em>C</em></strong><sub><strong><em>2</em></strong></sub> (point <strong><em>M</em></strong>) to valence band <strong><em>V</em></strong><sub><strong><em>1</em></strong></sub> (Brillouin zone center) is 2.4912 eV at 10 K. The splitting of <strong><em>C</em></strong><sub><strong><em>1</em></strong></sub><strong><em>–C</em></strong><sub><strong><em>2</em></strong></sub> bands in <strong><em>M</em></strong> point of the Brillouin zone is equal to ∼43 meV. The indirect transitions from third conduction band <strong><em>C</em></strong><sub><strong><em>3</em></strong></sub> (point <strong><em>K</em></strong>) to valence band <strong><em>V</em></strong><sub><strong><em>1</em></strong></sub> in the nearby of <strong><em>Γ</em></strong> point are equal to 2.7683 eV at 10 K. The splitting of conduction bands <strong><em>C</em></strong><sub><strong><em>2</em></strong></sub> (point <strong><em>M</em></strong>) and <strong><em>C</em></strong><sub><strong><em>3</em></strong></sub> (point <strong><em>K</em></strong>) is higher than one for the splitting <strong><em>C</em></strong><sub><strong><em>1</em></strong></sub><strong><em>–C</em></strong><sub><strong><em>2</em></strong></sub>. It was observed bands associated with self-absorption of photoluminescence emission by phonons with symmetries <strong><em>E</em></strong><sub><strong><em>1g</em></strong></sub><sup><strong><em>1</em></strong></sup><strong><em>+A</em></strong><sub><strong><em>1g</em></strong></sub><sup><strong><em>2</em></strong></sup>, <strong><em>A</em></strong><sub><strong><em>1g</em></strong></sub><sup><strong><em>2</em></strong></sup><strong><em>+A</em></strong><sub><strong><em>1g</em></strong></sub><sup><strong><em>1</em></strong></sup> and <strong><em>A</em></strong><sub><strong><em>1g</em></strong></sub><sup><strong><em>2</em></strong></sup><strong><em>+E</em></strong><sub><strong><em>2g</em></strong></sub><sup><strong><em>2</em></strong></sup> involved in indirect transitions.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"157 ","pages":"Article 116395"},"PeriodicalIF":3.8000,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0925346724015787","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Absorption in E||b and E⊥c polarizations and photoluminescence at the absorption edge were studied at temperatures range 10–300 K. It was found that the smallest indirect transitions take place from the minimum of conduction band C1 (point M) to the maximum of valence band V1 in the Brillouin zone center (point Γ or nearby). A distance between these extrema is 2.4484 eV at 10 K. In addition, the magnitude of indirect transitions from the second band C2 (point M) to valence band V1 (Brillouin zone center) is 2.4912 eV at 10 K. The splitting of C1–C2 bands in M point of the Brillouin zone is equal to ∼43 meV. The indirect transitions from third conduction band C3 (point K) to valence band V1 in the nearby of Γ point are equal to 2.7683 eV at 10 K. The splitting of conduction bands C2 (point M) and C3 (point K) is higher than one for the splitting C1–C2. It was observed bands associated with self-absorption of photoluminescence emission by phonons with symmetries E1g1+A1g2, A1g2+A1g1 and A1g2+E2g2 involved in indirect transitions.
期刊介绍:
Optical Materials has an open access mirror journal Optical Materials: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
The purpose of Optical Materials is to provide a means of communication and technology transfer between researchers who are interested in materials for potential device applications. The journal publishes original papers and review articles on the design, synthesis, characterisation and applications of optical materials.
OPTICAL MATERIALS focuses on:
• Optical Properties of Material Systems;
• The Materials Aspects of Optical Phenomena;
• The Materials Aspects of Devices and Applications.
Authors can submit separate research elements describing their data to Data in Brief and methods to Methods X.