Achieving 11.23 % efficiency in CZTSSe solar cells via defect control and interface contact optimization

Abstract

The high open-circuit voltage deficit (V_{OC, def}) caused by structural imperfections in the absorber layer and charge loss during carrier transport is a critical barrier affecting the performance of Cu₂ZnSn(S,Se)₄ (CZTSSe) devices. In this work, Ag was added to the DMF-based Cu⁺-Sn⁴⁺ system, which significantly improved the crystal morphology and electrical properties of the absorber layer. Additionally, optimizing the selenization process not only reduced surface roughness and eliminated voids at the bottom of the absorber layer but also resulted in the formation of a MoSe₂ back interface layer with a more suitable thickness. These measures collectively enhanced the overall quality of the absorber layer, reducing the formation of deep-level defect clusters and effectively boosting carrier transport efficiency. Consequently, the concentration of bulk and interfacial defects decreased, and the impact of potential barriers on carrier movement was minimized. With these comprehensive improvements, the power conversion efficiency of CZTSSe solar cells increased from 8.48 % to 11.23 %. Our research demonstrates that optimizing the structure of the absorber layer can effectively enhance the performance of CZTSSe solar cells, providing valuable insights for the fabrication of high-efficiency devices in the future.