Accurately quantifying the recombination pathways unique in back contact solar cells

Abstract

With the rapid development of back contact (BC) solar cells, more refined characterization methods are eagerly required to match the evolving technology. Specifically, methodologies capable to accurately quantify the recombination values near the hole-selective contact (HSC)/Gap boundary are still lacking. Hence, we perform simulations using a simplified recombination model to re-specify the perimeter recombination in heterojunction back contact (HBC) solar cells on the prerequisite of excellent surface passivation. And then an innovative characterization method is developed to precisely extract the recombination current values of various regions. Moreover, our method is powerful in accurate localization of the defective regions, e.g., perimeter recombination, junction recombination, or leakage recombination issue, rendering sequentially target-oriented response much easier. We clarify the role relationship and the influence extent between the characteristic parameters and the intrinsic properties of HBC solar cells. Also, we believe the full utilization of the proposed method could accelerate the development of BC solar cells to a new level.