A new system for sample synthesis, preparation and modification combined with in-situ depth profiling using medium energy ions

Abstract

We present equipment for sample synthesis, preparation and modification enabling in-situ studies employing medium energy ion beams at the ion implanter facility of the Tandem Laboratory national research infrastructure at Uppsala University. The integral instrumentation enables controlled thin-film synthesis, modification and characterization applicable to study near-surface processes such as thin-film growth, phase transformation, oxidation, annealing, catalysis or ion implantation. We describe the available instrumentation with its specifications and present four demonstrative experiments with a particular focus on the acquired in-situ capabilities addressing 1) Evaporation and thermal alloying of thin films – nickel silicides 2) Reactive magnetron sputtering and controlled oxidization – photochromic YHO 3) Sputtering and low-energy implantation – hydrogen in tungsten and 4) Surface cleaning of sensitive systems – self-supporting silicon membranes.