Zhaoheng Meng , Tianhong Xia , Zhenhao Wang , Xiaofang Hu
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引用次数: 0
Abstract
Toxic gases have been extensively employed in warfare, spanning from the deployment of irritant tear gas to fatal nerve gas. These chemical armaments have caused significant damage and casualties in times of conflict. This study explores the adsorption properties and sensing mechanisms of three chemical warfare agents(chlorine Cl2, phosgene COCl2, chloropicrin CCl3NO2) on both pristine SnS2 and doped SnS2 using density functional theory (DFT). The results highlight the superior adsorption energy, charge transfer efficiency, and band structure of doped Ptn/SnS2 (n=1,3) compared to pristine SnS2. Pt/SnS2 exhibits exceptional adsorption capabilities for all three war gases. Under specific conditions, Pt3/SnS2(cluster) emerges as an ideal material for detecting Cl2 and CCl3NO2, while also serving as an effective adsorbent for COCl2 gas. This research serves as a valuable reference for sensor performance studies grounded in first-principles theory, showcasing the potential of doped Pt3/SnS2 as a viable sensor for warfare gases. The insights from this study contribute to the development of advanced poison gas sensors, facilitating improvements in poison gas detection and prevention capabilities.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...