Strain-dependent Rashba effect, and spin Hall conductivity in the altermagnetic Janus V2SeTeO monolayer

Abstract

Altermagnets represent a distinctive class of antiferromagnetic materials characterized by non-overlapping spin bands and attract extensive research efforts. Herein, we investigate the interplay among electronic, magnetic, and spin transport phenomena of the Janus V₂SeTeO monolayer. The Janus monolayer has a direct band gap of 0.32 eV. The Janus V₂SeTeO layer has an in-plane magnetic anisotropy along (110) direction. The incorporation of spin-orbit coupling (SOC) induces a Rashba-type band structure with a Rashba coefficient of 1.02 eV Å. The Rashba coefficient is insensitive to the compressive strain. In contrast, it is suppressed with tensile strain and becomes almost zero at 3 % tensile strain. The maximum SHC of around ∼ −65 (ℏ/e)S/cm is achieved with hole doping. The magnitudes of SHC remain comparable to those in typical topological materials. Overall, this investigation provides fundamental insights into the magnetic, Rashba, and spin transport properties of the Janus V₂SeTeO altermagnet monolayer.