TiB1.8 single layers and epitaxial TiB2-based superlattices by magnetron sputtering using a TiB (Ti:B = 1:1) target

Abstract

Sputter-deposited titanium diborides are promising candidates for protective coatings in harsh and extreme conditions. However, growing these layers from TiB₂ diboride targets by DC magnetron sputtering usually leads to over-stoichiometric layers with low crystal qualities. Moreover, superlattices with TiB₂ as one of the constituents have been becoming popular, owing to their superior mechanical properties compared to single layer constituents in addition to their use in other applications such as neutron optics. Here, we propose the use of a TiB (Ti:B = 1:1) sputtering target in an on-axis deposition geometry and demonstrate the growth of epitaxial sub-stoichiometric TiB_1.8 thin films. Furthermore, we present the growth of CrB_1.7/TiB_1.8 superlattices, from TiB (Ti:B = 1:1) and stoichiometric CrB₂ targets, with abrupt interfaces as promising materials system for neutron interference mirrors. The high crystal quality structure with well-defined interfaces is the common feature of superlattices which, regardless of application, should be addressed during the growth process.

Utilizing TiB target, all films crystallize in the hexagonal AlB₂ structure. The sub-stoichiometry of the TiB_1.8 films was accompanied by the presence of planar defects embedded in the films. CrB_1.7/TiB_1.8 superlattices exhibited a homogeneous boron distribution within the layers with no sign of B-rich tissue phases through the layers. This study demonstrates the feasibility for TiB as sputter target material, that offers a solution for deposition of TiB₂-based superlattices without the need to adjust the deposition parameters. Such adjustments would otherwise be unavoidable for tuning the TiB₂ composition and could affect the growth of the other constituent materials.