The impact of graphene oxide nanosheet lateral dimensions on the electrochemical performance of nanoporous graphene-based electrodes

IF 4.3 3区 材料科学 Q2 MATERIALS SCIENCE, COATINGS & FILMS Diamond and Related Materials Pub Date : 2024-11-03 DOI:10.1016/j.diamond.2024.111722
María del Pilar Bernicola , Miquel Madrid-Gimeno , Nerea Murillo-Cremaes , Tommaso Battisti , Neus Lozano , Kostas Kostarelos , Jose A. Garrido , Elena del Corro
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Abstract

Electrodes based on nanoporous reduced graphene oxide (rGO) have been developed as the interfacing component in different designs of neural implants in a variety of therapeutic and monitoring applications. The starting graphene oxide (GO) nanosheets lateral dimensions influenced the staking order, roughness and thickness of the derived rGO films, including the formation of nanochannels. Apart from the morphological differences observed, the GO lateral dimension also impacted on the film conductivity, and on the overall electrochemical performance of the rGO electrodes. While electrodes fabricated from nano-scale GO sheets (us-GO) only showed diffusion-limited impedance in the high frequency regime, the electrical response of electrodes from micron-scale GO sheets (L-GO) was limited by diffusion in the whole frequency range due to a less disordered nanoporous film. At 1 kHz, us-GO electrodes, due to their larger capacitance, presented a higher charge injection limit (Qinj.l.) than L-GO electrodes. Due to the higher conductivity of L-GO, electrodes exhibited half the ohmic drop (IR) of electrodes made of us-GO. This work highlights the importance of GO nanosheet engineering to optimize the performance of rGO electrodes in terms of Qinj.l. and IR, two key figures of merit in neuroelectronic applications.

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氧化石墨烯纳米片横向尺寸对纳米多孔石墨烯基电极电化学性能的影响
基于纳米多孔还原氧化石墨烯(rGO)的电极已被开发为各种治疗和监测应用中不同设计的神经植入物的接口元件。起始氧化石墨烯(GO)纳米片的横向尺寸影响了衍生 rGO 薄膜的堆积顺序、粗糙度和厚度,包括纳米通道的形成。除了观察到的形态差异外,GO 的横向尺寸还影响了薄膜的导电性以及 rGO 电极的整体电化学性能。用纳米级 GO 薄膜制造的电极(us-GO)仅在高频情况下表现出扩散受限的阻抗,而用微米级 GO 薄膜制造的电极(L-GO)由于纳米多孔薄膜的无序程度较低,其电响应在整个频率范围内都受到扩散的限制。在 1 kHz 频率下,由于电容较大,us-GO 电极的电荷注入极限(Qinj.l.)高于 L-GO 电极。由于 L-GO 的电导率较高,电极的欧姆降(IR)只有 us-GO 制成的电极的一半。这项工作凸显了 GO 纳米片工程在优化 rGO 电极的 Qinj.l. 和 IR 性能方面的重要性,而 Qinj.l. 和 IR 是神经电子应用中的两个关键指标。
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来源期刊
Diamond and Related Materials
Diamond and Related Materials 工程技术-材料科学:综合
CiteScore
6.00
自引率
14.60%
发文量
702
审稿时长
2.1 months
期刊介绍: DRM is a leading international journal that publishes new fundamental and applied research on all forms of diamond, the integration of diamond with other advanced materials and development of technologies exploiting diamond. The synthesis, characterization and processing of single crystal diamond, polycrystalline films, nanodiamond powders and heterostructures with other advanced materials are encouraged topics for technical and review articles. In addition to diamond, the journal publishes manuscripts on the synthesis, characterization and application of other related materials including diamond-like carbons, carbon nanotubes, graphene, and boron and carbon nitrides. Articles are sought on the chemical functionalization of diamond and related materials as well as their use in electrochemistry, energy storage and conversion, chemical and biological sensing, imaging, thermal management, photonic and quantum applications, electron emission and electronic devices. The International Conference on Diamond and Carbon Materials has evolved into the largest and most well attended forum in the field of diamond, providing a forum to showcase the latest results in the science and technology of diamond and other carbon materials such as carbon nanotubes, graphene, and diamond-like carbon. Run annually in association with Diamond and Related Materials the conference provides junior and established researchers the opportunity to exchange the latest results ranging from fundamental physical and chemical concepts to applied research focusing on the next generation carbon-based devices.
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