Damage mechanisms caused by radiation in Proton(ion beam) double interface layer nano-MOS structure

Abstract

In this study, the effects of ion beam (proton) on the PbO/SnO₂/p-Si double interfacial layer MOS Schottky diode material were studied. The parameters of the ionizing radiation detection properties and radiation resistance of using double interfacial oxide layers were analyzed in MOS Schottky diodes. In the analysis, SRIM/TRIM software code was examined theoretically and modeled using simulation. The displacement per atom occurs more in the SnO₂ oxide layer than in the other interface layer. This can be explained by the concept of Bragg Curve Peak, which occurs as a result of ion beam induced doping effect. It has been observed that the electrical properties of the PbO/SnO₂/p-Si double interface layer MOS Schottky diode structure in terms of sensing ionizing radiation change after ion beam induced doping and the interface states are affected. It has been shown that our double interface layer nano-MOS structure can be used as a ion beam based sensor on these results. In addition to the inelastic collision, without causing ionization NIEL values of PbO and SnO₂ layers were found to be 424.88 MeV. cm²/g and 524.9 MeV. cm²/g, respectively. These theoretical results were shown as graphs using the TRIM Monte Carlo simulation program and the behavior of the phonons in the layers was modeled. Additionally, LET values were calculated according to layers and compared with the simulation results of TRIM. While the LET value of the PbO layer was 889.3 MeV. cm²/g, the LET value of the SnO₂ layer was determined to be 1639 MeV cm²/g. The LET concept is visually presented with the TRIM software and it is seen that the displacement per atom is highest in the SnO₂ layer and the Bragg Curve reaches its maximum point. Thus, it can be seen that the SnO₂ layer produces more transient damage and oxide interface traps compared to the PbO layer as ionizing radiation propagates between the oxide layers. By studying the effects of the ion beam source on the MOS Schottky diode structure, it is shown that the double interface layer structure increases the oxide interface traps and the SnO₂ material is promising in terms of radiation sensing and detection properties. Moreover, MOS Schottky states that using a double interface layer instead of a single oxide layer in MOS structures positively increases the number of interface traps in the oxide layer for ion beam radiation detection.