Static Approximate Modified Mirror—Full Adder for High Speed and Low Power Operations Using 32 nm CNTFET Technology

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-11-12 DOI:10.1002/jnm.3320

Sagar Juneja, M. Elangovan, Kulbhushan Sharma

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Abstract

The error tolerance nature of the digital multimedia applications enables the implementation of approximate digital circuits to achieve the benefits of high speed of operation and low power consumption. This paper proposes a static approximate modified mirror full adder (SAMM-FA) circuit designed using logic level approximation to reduce the number of transistors in the circuit. Owing to the balanced electrical characteristics, better stability and higher on-current to off-current ratio (I_on/I_off), 32 nm carbon nanotube field effect transistor (CNTFET) technology has been used for implementing the proposed circuit in the Cadence Virtuoso tool. Featuring only 10 transistors and operating at a supply voltage of 0.5 V, the proposed SAMM-FA has a low power dissipation of just 4.14 nW, and propagation delay of just 3.82 ps. The power delay product and energy delay product figure of merits of the proposed circuit are found to be excellent when compared with the contemporary designs.

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利用 32 纳米 CNTFET 技术实现高速低功耗运行的静态近似修正镜像满加法器

数字多媒体应用的容错特性使近似数字电路的实现成为可能，从而实现高速运行和低功耗的优势。本文提出了一种静态近似修正镜像全加法器（SAMM-FA）电路，采用逻辑级近似设计，以减少电路中的晶体管数量。由于该电路具有均衡的电气特性、更好的稳定性和更高的导通/关断电流比（Ion/Ioff），因此在 Cadence Virtuoso 工具中采用了 32 纳米碳纳米管场效应晶体管（CNTFET）技术来实现该电路。拟议的 SAMM-FA 仅有 10 个晶体管，工作电压为 0.5 V，功耗仅为 4.14 nW，传播延迟仅为 3.82 ps。与同类设计相比，所提电路的功率延迟积和能量延迟积均非常出色。

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来源期刊

International Journal of Numerical Modelling-Electronic Networks Devices and Fields 工程技术-工程：电子与电气

CiteScore

4.60

自引率

6.20%

发文量

101

审稿时长

>12 weeks

期刊介绍： Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.