{"title":"Spectroscopic characteristics and radiative parameters of Er+3 doped ternary lead bismuth tellurite glass: Judd–Ofelt analysis","authors":"Ahmed A. Ahmed, Saman Q. Mawlud","doi":"10.1007/s11082-024-07109-9","DOIUrl":null,"url":null,"abstract":"<div><p>Melt quenching was utilized to produce Er<sup>+3</sup>-doped lead–bismuth tellurite glasses with the following composition: (75-x) TeO<sub>2</sub>–15 PbO–10 Bi<sub>2</sub>O<sub>3</sub>–xEr<sub>2</sub>O<sub>3</sub>, where x = 0, 0.5, 1, 1.5, 2, and 2.5 mol%. The impact of Er<sup>3+</sup> doping was assessed by analyzing its optical and physical properties. Using XRD, the non-crystalline character of the materials was determined. The density of the samples was increased from 6.387 to 6.528 g.cm<sup>−3</sup>. The absorption spectra show eight transition bands corresponding to the transitions from <sup>4</sup>I<sub>15/2</sub> to <sup>4</sup>I<sub>13/2,</sub> <sup>4</sup>I<sub>11/2,</sub> <sup>4</sup>I<sub>9/2,</sub> <sup>4</sup>F<sub>9/2,</sub> <sup>4</sup>S<sub>3/2,</sub> <sup>2</sup>H<sub>11/2,</sub> <sup>4</sup>F<sub>7/2</sub> and <sup>4</sup>F<sub>5/2,</sub> respectively. Judd–Ofelt theory was utilized to compute both the experimental and calculated oscillator strengths. The trends of the intensity parameters are as follows: Ω<sub>2</sub> > Ω<sub>6</sub> > Ω<sub>4</sub>. A total of three emission bands were detected in the spectrum of fluorescence. The green transition <sup>4</sup>S<sub>3/2</sub> → <sup>4</sup>I<sub>15/2</sub> is the strongest among other transitions. To ascertain the color coordinates, the CIE 1931 chromaticity diagram was applied. 95.11% was the maximum quantum efficiency for the transition <sup>4</sup>S<sub>3/2</sub> → <sup>4</sup>I<sub>15/2</sub>. The findings indicate that TPBE2 glass exhibits considerable potential as a material for photonic applications and the production of laser optical systems.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3000,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-024-07109-9","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Melt quenching was utilized to produce Er+3-doped lead–bismuth tellurite glasses with the following composition: (75-x) TeO2–15 PbO–10 Bi2O3–xEr2O3, where x = 0, 0.5, 1, 1.5, 2, and 2.5 mol%. The impact of Er3+ doping was assessed by analyzing its optical and physical properties. Using XRD, the non-crystalline character of the materials was determined. The density of the samples was increased from 6.387 to 6.528 g.cm−3. The absorption spectra show eight transition bands corresponding to the transitions from 4I15/2 to 4I13/2,4I11/2,4I9/2,4F9/2,4S3/2,2H11/2,4F7/2 and 4F5/2, respectively. Judd–Ofelt theory was utilized to compute both the experimental and calculated oscillator strengths. The trends of the intensity parameters are as follows: Ω2 > Ω6 > Ω4. A total of three emission bands were detected in the spectrum of fluorescence. The green transition 4S3/2 → 4I15/2 is the strongest among other transitions. To ascertain the color coordinates, the CIE 1931 chromaticity diagram was applied. 95.11% was the maximum quantum efficiency for the transition 4S3/2 → 4I15/2. The findings indicate that TPBE2 glass exhibits considerable potential as a material for photonic applications and the production of laser optical systems.
期刊介绍:
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.