Pseudo Molecular Doping and Ambipolarity Tuning in Si Junctionless Nanowire Transistors Using Gaseous Nitrogen Dioxide

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Advanced Electronic Materials Pub Date : 2024-11-19 DOI:10.1002/aelm.202400338
Vaishali Vardhan, Subhajit Biswas, Sayantan Ghosh, Leonidas Tsetseris, Tandra Ghoshal, Stig Hellebust, Yordan M. Georgiev, Justin D. Holmes
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Abstract

Ambipolar transistors facilitate concurrent transport of both positive (holes) and negative (electrons) charge carriers in the semiconducting channel. Effective manipulation of conduction symmetry and electrical characteristics in ambipolar silicon junctionless nanowire transistors (Si-JNTs) is demonstrated using gaseous nitrogen dioxide (NO2). This involves a dual reaction in both p- and n-type conduction, resulting in a significant decrease in the current in n-conduction mode and an increase in the p-conduction mode upon NO2 exposure. Various Si-JNT parameters, including “on”-current (Ion), threshold voltage (Vth), and mobility (µ) exhibit dynamic changes in both the p- and n-conduction modes of the ambipolar transistor upon interaction with NO2 (concentration between 2.5 – 50 ppm). Additionally, NO2 exposure to Si-JNTs with different surface morphologies, that is, unpassivated Si-JNTs with a native oxide or with a thermally grown oxide (10 nm), show distinct influences on Ion, Vth, and µ, highlighting the effect of surface oxide on NO2-mediated charge transfer. Interaction with NO2 alters the carrier concentration in the JNT channel, with NO2 acting as an electron acceptor and inducing holes, as supported by Density Functional Theory (DFT) calculations, providing a pathway for charge transfer and “pseudo” molecular doping in ambipolar Si-JNTs.

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利用气态二氧化氮在硅无结纳米线晶体管中进行伪分子掺杂和安极性调谐
安培极晶体管有利于正(空穴)负(电子)电荷载流子同时在半导体沟道中传输。利用气态二氧化氮(NO2)展示了如何有效地操纵伏极硅无结纳米线晶体管(Si-JNTs)的传导对称性和电气特性。这涉及 p 型和 n 型传导的双重反应,导致在接触二氧化氮时,n 型传导模式的电流显著下降,而 p 型传导模式的电流上升。各种 Si-JNT 参数,包括 "导通 "电流 (Ion)、阈值电压 (Vth) 和迁移率 (µ),在与二氧化氮(浓度介于 2.5 - 50 ppm 之间)相互作用时,伏极晶体管的 p 型和 n 型传导模式都会发生动态变化。此外,不同表面形态的 Si-JNT(即带有原生氧化物的未钝化 Si-JNT 或带有热生长氧化物(10 纳米)的 Si-JNT)暴露于二氧化氮后,离子、Vth 和 µ 会受到不同的影响,这突出表明了表面氧化物对二氧化氮介导的电荷转移的影响。与二氧化氮的相互作用改变了 JNT 通道中的载流子浓度,二氧化氮充当电子受体并诱导空穴,这一点得到了密度泛函理论(DFT)计算的支持,为伏极性 Si-JNT 中的电荷转移和 "伪 "分子掺杂提供了途径。
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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