Yuan Zhu, Tomas Nyberg, Leif Nyholm, Daniel Primetzhofer, Xun Shi, Zhen Zhang
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引用次数: 0
Abstract
Highlights
Wafer-scale integration of Ag2S-based memristive crossbar arrays was demonstrated using complementary metal–oxide–semiconductor (CMOS) compatible processes below 160 °C.
A record-low threshold voltage for filament formation and an ultra-low switching-energy reaching that of biological synapses in wafer-scale CMOS-compatible memristive units were achieved.
The energy-efficient resistance switching was enabled by self-supply of mobile Ag+ ions in Ag2S electrolytes and low silver-nucleation barrier at Ag/Ag2S interface.
期刊介绍：
Nano-Micro Letters is a peer-reviewed, international, interdisciplinary, and open-access journal published under the SpringerOpen brand.
Nano-Micro Letters focuses on the science, experiments, engineering, technologies, and applications of nano- or microscale structures and systems in various fields such as physics, chemistry, biology, material science, and pharmacy.It also explores the expanding interfaces between these fields.
Nano-Micro Letters particularly emphasizes the bottom-up approach in the length scale from nano to micro. This approach is crucial for achieving industrial applications in nanotechnology, as it involves the assembly, modification, and control of nanostructures on a microscale.
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