Impact of T-Shape Drain Doping Engineering on the Analog/RF and High-Frequency Noise Parameters of Junctionless Si/ Si0.7Ge0.3 FET: A Numerical Simulation Study

Abstract

Decreased carrier mobility in the junctionless field-effect transistors (JLFETs) channel limits their performance for applications in high-frequency electronics. This paper presents a drain doping technique based on CMOS technology is offered for the first time to improve the analog/RF performance and high-frequency noise parameters of a CONV-shell doped channel- JLFET (CONV-SDCHJLFET). The proposed device is called DG-JLFET with T-shape drain doping (DG-JLFET with TSDD), in which two main drain regions (regions d₁ and d₂) are crucial to achieve the desired results. By fine-tuning various influencing factors within these two regions, the DG-JLFET with TSDD achieves a transconductance (g_mmax) of 4.41 mS/um, a cut-off frequency (f_T) of 813 GHz, a minimum noise figure (NF_min) of 0.6 dB and an available associated gain (Gma) of 19.92 dB. g_mmax, f_T, NF_min, and Gma of the SDCh-JLFET increased by 78%, 30%, 53%, and 19.2%, respectively, compared to the CONV-SDCHJLFET with similar dimensions. This device is excellent for analog/RF applications and performs well in high-frequency noise, making it an ideal choice for demanding next-generation telecommunications applications.