Guiping Ji, Yuejie Zhang, Yahong Chai, Tianxiang Nan
{"title":"Recent progress on controlling spin-orbit torques by materials design","authors":"Guiping Ji, Yuejie Zhang, Yahong Chai, Tianxiang Nan","doi":"10.1038/s44306-024-00054-z","DOIUrl":null,"url":null,"abstract":"Spin-orbit torques (SOTs) provide an energy-efficient approach for the electrical manipulation of magnetization, pivotal for next-generation information storage and processing devices. SOTs can be generated via various mechanisms, such as spin Hall effect, Rashba-Edelstein effect, orbital Hall effect, magnons, and spin swapping. SOTs-based devices hold potential advantages over spin-transfer torque (STT) devices, including low power consumption, enhanced durability, and a broader selection of applicable materials for both SOT generation and excitation. Despite the discovery of numerous materials capable of generating significant SOTs, achieving efficient and deterministic field-free switching of perpendicular magnetization remains a critical challenge, which is essential for the practical deployment of SOT in high-density magnetic memories. This review highlights recent progress in controlling SOTs through innovative materials design, encompassing strategies such as strain engineering of the spin Hall angle, interfacial engineering of the spin transmissivity and topological surface states, and symmetry engineering to achieve deterministic field-free switching of perpendicular magnetization. By exploring these effective methods for manipulating SOTs, this review aims to lay the groundwork for the development of optimized spintronics devices and applications.","PeriodicalId":501713,"journal":{"name":"npj Spintronics","volume":" ","pages":"1-14"},"PeriodicalIF":0.0000,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s44306-024-00054-z.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"npj Spintronics","FirstCategoryId":"1085","ListUrlMain":"https://www.nature.com/articles/s44306-024-00054-z","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Spin-orbit torques (SOTs) provide an energy-efficient approach for the electrical manipulation of magnetization, pivotal for next-generation information storage and processing devices. SOTs can be generated via various mechanisms, such as spin Hall effect, Rashba-Edelstein effect, orbital Hall effect, magnons, and spin swapping. SOTs-based devices hold potential advantages over spin-transfer torque (STT) devices, including low power consumption, enhanced durability, and a broader selection of applicable materials for both SOT generation and excitation. Despite the discovery of numerous materials capable of generating significant SOTs, achieving efficient and deterministic field-free switching of perpendicular magnetization remains a critical challenge, which is essential for the practical deployment of SOT in high-density magnetic memories. This review highlights recent progress in controlling SOTs through innovative materials design, encompassing strategies such as strain engineering of the spin Hall angle, interfacial engineering of the spin transmissivity and topological surface states, and symmetry engineering to achieve deterministic field-free switching of perpendicular magnetization. By exploring these effective methods for manipulating SOTs, this review aims to lay the groundwork for the development of optimized spintronics devices and applications.
自旋轨道力矩(SOT)为磁化的电操纵提供了一种节能方法,对下一代信息存储和处理设备至关重要。自旋轨道力矩可通过各种机制产生,如自旋霍尔效应、拉什巴-爱德斯坦效应、轨道霍尔效应、磁子和自旋交换。与自旋转移力矩(STT)器件相比,基于 SOT 的器件具有潜在的优势,包括功耗低、耐用性强,以及 SOT 生成和激发的适用材料选择范围更广。尽管发现了许多能够产生显著自旋转移力矩的材料,但实现垂直磁化的高效和确定性无磁场切换仍然是一个严峻的挑战,这对于在高密度磁存储器中实际部署自旋转移力矩至关重要。本综述重点介绍通过创新材料设计控制 SOT 的最新进展,包括自旋霍尔角的应变工程、自旋透射率和拓扑表面态的界面工程以及对称性工程等策略,以实现垂直磁化的确定性无磁场切换。本综述旨在通过探讨这些操纵 SOT 的有效方法,为开发优化的自旋电子器件和应用奠定基础。