Research on RF performance of GaN HEMT with graded Al composition AlGaN back-barrier

IF 2.7 Q2 PHYSICS, CONDENSED MATTER Micro and Nanostructures Pub Date : 2024-11-22 DOI:10.1016/j.micrna.2024.208028

Ruihao Zhang , Fayu Wan , Ru Xu , Jiarun Xu , Runtao Song , Long Wang , Xing Zhao

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Abstract

In this paper, we apply AlGaN back-barrier with graded Al composition to effectively improve the RF performance of GaN high electron mobility transistor (HEMT). Simulation results demonstrate that compared with GaN HEMT with fixed Al composition AlGaN back-barrier, graded AlGaN back-barrier HEMT has lower gate capacitance and better two-dimensional electron gas (2DEG) confinement. Its cut-off frequency (

f_{t}

) and maximum oscillation frequency (

f_{\max}

) reach 100 GHz and 179.8 GHz, respectively, an increase of 12.1 GHz and 42.9 GHz. Due to the lower power supply, graded AlGaN back-barrier HEMT also significantly improves the power added efficiency (PAE) compared with HEMT without back-barrier, increasing 20 %. Moreover, it is found that graded AlGaN back-barrier HEMT has better large-signal performance than fixed AlGaN back-barrier HEMT for the better electron confinement.

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具有分级铝成分氮化镓背衬的氮化镓 HEMT 的射频性能研究

本文采用铝成分分级的氮化镓背屏障，有效改善了氮化镓高电子迁移率晶体管（HEMT）的射频性能。仿真结果表明，与采用固定铝成分氮化镓背屏障的氮化镓高电子迁移率晶体管相比，分级氮化镓背屏障 HEMT 具有更低的栅电容和更好的二维电子气体（2DEG）约束。其截止频率（ft）和最大振荡频率（fmax）分别达到 100 GHz 和 179.8 GHz，分别提高了 12.1 GHz 和 42.9 GHz。由于电源较低，分级 AlGaN 背屏障 HEMT 还显著提高了功率附加效率（PAE），与无背屏障 HEMT 相比提高了 20%。此外，研究还发现分级氮化镓背栅 HEMT 比固定氮化镓背栅 HEMT 具有更好的电子约束，因而具有更好的大信号性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Micro and Nanostructures

CiteScore

6.50

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0.00%

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