Pengxiang Hou , Pin Wang , Yifei Li , Weiliang Zhong , Yuebin Han , Jing Wang , Le Yu , Zheyang Li , Rui Jin
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引用次数: 0
Abstract
The effect of stacking faults (SFs) on carrier lifetime in 110 μm 4H-SiC epilayers has been studied using photoluminescence and microwave photoconductance decay. The carrier lifetimes are associated with different types of SFs. The SFs are distinguished as multi-SFs and mono-SFs in terms of their characteristic luminescence peaks. The average lifetime at multi-SFs is about 60 % of that at mono-SFs. Contrary to the quantum well models reported previously, multi-SFs decrease the minority carrier lifetime than mono-stacking faults even with shallower energy levels. A “step-structure” quantum well model is proposed to discuss the carrier dynamics for the enhanced recombination at the multi-stacking faults.
期刊介绍：
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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