{"title":"Unveiling role of exchange-correlation functions in investigating physical properties of CsMnCl3 perovskite for optoelectronic applications","authors":"Sidra Sabir , Shakeel Ahmad , Abdul Ghafar Wattoo","doi":"10.1016/j.mssp.2024.109138","DOIUrl":null,"url":null,"abstract":"<div><div>Metal halide perovskites have garnered significant attention for their transformative applications in photovoltaics, optoelectronics, and photocatalysis. This study pioneers an in-depth examination of the structural, electronic, elastic, mechanical, and optical properties of CsMnCl<sub>3</sub> perovskite using GGA-PBE and GGA + U calculations with diverse exchange-correlation functionals (PBE, RPBE, PW91, WC, and PBEsol) within the CASTEP code. The structural parameters of CsMnCl<sub>3</sub> perovskite are substantially affected by the exchange-correlation function, particularly the lattice constants, which exhibit functional-dependent variations. The material demonstrates metallic properties under GGA-PBE, while it manifests semiconductor behavior with an indirect energy bandgap energy (R→G) under other functionals GGA + U with PBE, RPBE, PW91, WC, and PBEsol. Notably, the calculated energy bandgaps exhibit functional-specific variations: 1.956 eV (GGA + U-PBE), 2.041 eV (GGA + U-RPBE), 1.994 eV (GGA + U-PW91), 1.890 eV (GGA + U-WC), and 1.895 eV (GGA + U-PBEsol). The compound shows low reflectivity, a large absorption coefficient value, and good optical conductivity in the visible region. Moreover, the Born stability criterion suggests that material is mechanically stable, and ductile according to Poisson scale/Pugh's ratio. It has an anisotropic nature according to the anisotropy index. These exceptional results advocate its suitability for flexible optoelectronic applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109138"},"PeriodicalIF":4.2000,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800124010345","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Metal halide perovskites have garnered significant attention for their transformative applications in photovoltaics, optoelectronics, and photocatalysis. This study pioneers an in-depth examination of the structural, electronic, elastic, mechanical, and optical properties of CsMnCl3 perovskite using GGA-PBE and GGA + U calculations with diverse exchange-correlation functionals (PBE, RPBE, PW91, WC, and PBEsol) within the CASTEP code. The structural parameters of CsMnCl3 perovskite are substantially affected by the exchange-correlation function, particularly the lattice constants, which exhibit functional-dependent variations. The material demonstrates metallic properties under GGA-PBE, while it manifests semiconductor behavior with an indirect energy bandgap energy (R→G) under other functionals GGA + U with PBE, RPBE, PW91, WC, and PBEsol. Notably, the calculated energy bandgaps exhibit functional-specific variations: 1.956 eV (GGA + U-PBE), 2.041 eV (GGA + U-RPBE), 1.994 eV (GGA + U-PW91), 1.890 eV (GGA + U-WC), and 1.895 eV (GGA + U-PBEsol). The compound shows low reflectivity, a large absorption coefficient value, and good optical conductivity in the visible region. Moreover, the Born stability criterion suggests that material is mechanically stable, and ductile according to Poisson scale/Pugh's ratio. It has an anisotropic nature according to the anisotropy index. These exceptional results advocate its suitability for flexible optoelectronic applications.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.