Tongtong Zhang , Yuling Liu , Hongdong Zhao , Xiaodong Luan , Chong Luo
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引用次数: 0
Abstract
In this work, α-sodium alkene sulfonate (α-AOS) and alkylphenol polyoxyethylene ether phosphate (APE-10P) were tested as environmentally friendly inhibitors in slurries to replace toxic benzotriazole. α-AOS and APE-10P can improve slurry dispersion, increase the inhibition efficiency to 79.6 % and polishing rate reduced to 8414 Å/min; Reduced corrosion and surface roughness decreased from 3.10 nm to 1.41 nm; By measuring the particle size of polishing solution, it has been proven that the addition of two active agents effectively improves the dispersion of the solution, reduces the distance between silica sol colloids, and reduces the particle size of silica sol from 71.5 nm to 68.5 nm; To verify the stability of the polishing solution, the Zeta potential of the polishing solution on the first day was −40.99 mV, and on the seventh day it was −36.6 mV, which can meet the stability requirements for at least seven days and meet industrial requirements. Calculation proves that APE-10P and α-AOS can spontaneously adsorb on Cu surfaces. This work focuses on the mechanism of inhibition in Cu CMP, which provides some inspirations for the development of environmentally friendly slurries.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
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Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.