The effects of α-sodium alkenesulfonate and alkylphenol polyoxyethylene ether phosphate on the inhibition of copper chemical mechanical polishing

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2024-11-25 DOI:10.1016/j.mssp.2024.109145
Tongtong Zhang , Yuling Liu , Hongdong Zhao , Xiaodong Luan , Chong Luo
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Abstract

In this work, α-sodium alkene sulfonate (α-AOS) and alkylphenol polyoxyethylene ether phosphate (APE-10P) were tested as environmentally friendly inhibitors in slurries to replace toxic benzotriazole. α-AOS and APE-10P can improve slurry dispersion, increase the inhibition efficiency to 79.6 % and polishing rate reduced to 8414 Å/min; Reduced corrosion and surface roughness decreased from 3.10 nm to 1.41 nm; By measuring the particle size of polishing solution, it has been proven that the addition of two active agents effectively improves the dispersion of the solution, reduces the distance between silica sol colloids, and reduces the particle size of silica sol from 71.5 nm to 68.5 nm; To verify the stability of the polishing solution, the Zeta potential of the polishing solution on the first day was −40.99 mV, and on the seventh day it was −36.6 mV, which can meet the stability requirements for at least seven days and meet industrial requirements. Calculation proves that APE-10P and α-AOS can spontaneously adsorb on Cu surfaces. This work focuses on the mechanism of inhibition in Cu CMP, which provides some inspirations for the development of environmentally friendly slurries.
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α-烯磺酸钠和烷基酚聚氧乙烯醚磷酸酯对铜化学机械抛光抑制作用的影响
α-AOS和APE-10P可改善浆液的分散性,使抑制效率提高到79.6%,抛光速率降低到8414埃/分钟;降低了腐蚀性,表面粗糙度从3.10 nm降低到1.41 nm。41 nm;通过测量抛光液的粒度,证明两种活性剂的加入有效改善了溶液的分散性,减小了硅溶胶之间的距离,硅溶胶的粒度从 71.5 nm 减小到 68.5 nm;为了验证抛光液的稳定性,抛光液第一天的 Zeta 电位为 -40.99 mV,第七天为 -36.6 mV,至少可以满足七天的稳定性要求,符合工业要求。计算证明 APE-10P 和 α-AOS 能自发吸附在铜表面。这项工作主要研究了 Cu CMP 中的抑制机理,为开发环境友好型泥浆提供了一些启示。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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