Influence of MoO3’s blend in hole transporting layer on the performance of Alq3-based OLEDs

Next Materials Pub Date : 2024-11-18 DOI:10.1016/j.nxmate.2024.100426

Yukang Zhao , Jiangsen Su , Wenjing Zou , Youzhi Wu , Cairong Zhang , Ming Shao

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Abstract

MoO₃ was introduced in a typical hole transporting material N,N’-diphenyl-N,N’-bis(1-naphthyl) (1,1’-biphenyl)-4,4’diamine (NPB) to improve the performance of tris-(8-hydroxyquinoline) aluminum (Alq₃) based organic light emitting diodes (OLEDs). It is found that MoO₃ in NPB layer has a significant quenching effect on the electroluminescence of the device, although the current density-voltage characteristics of the devices is improved. At a current density of 20 mA/cm², the driving voltage of the device with MoO₃-blended NPB (50 wt%) is 5.83 V, which is 0.77 V lower than that (6.6 V) of the device without MoO₃, while the brightness (54.3 cd/m²) or current efficiency (0.27 cd/A) of the former is one order of magnitude lower than that (735 cd/m² or 3.68 cd/A) of the latter. The formation of energy gap states by the charge transfer between MoO₃ and NPB or Alq₃ is used to explain the results.

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空穴传输层中混入的 MoO3 对基于 Alq3 的有机发光二极管性能的影响

在典型的空穴传输材料 N,N'-二苯基-N,N'-双（1-萘基）（1,1'-联苯）-4,4'二胺（NPB）中引入了 MoO3，以改善基于三（8-羟基喹啉）铝（Alq3）的有机发光二极管（OLED）的性能。研究发现，NPB 层中的 MoO3 对器件的电致发光有显著的淬灭作用，但器件的电流密度-电压特性得到了改善。在电流密度为 20 mA/cm2 时，含有 MoO3 混合 NPB（50 wt%）的器件的驱动电压为 5.83 V，比不含有 MoO3 的器件的驱动电压（6.6 V）低 0.77 V，而前者的亮度（54.3 cd/m2）或电流效率（0.27 cd/A）比后者（735 cd/m2 或 3.68 cd/A）低一个数量级。MoO3 与 NPB 或 Alq3 之间的电荷转移所形成的能隙态被用来解释这些结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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