Dislocations in 4H-SiC epilayers for power devices: Identification, formation, and regulation

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2024-11-26 DOI:10.1016/j.mssp.2024.109147

Yifei Li , Pengxiang Hou , Shuangyuan Pan , Pin Wang , Weiwei Cheng , Jing Wang , Le Yu , Zheyang Li , Rui Jin

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Abstract

4H-SiC is highly promising for modern electronics, particularly in high-temperature, high-frequency, and high-power applications. However, the presence of dislocations in 4H-SiC epilayers significantly affects the performance and reliability of 4H-SiC-based power devices, thus limiting their widespread application. This review provides an overview of the classification, fundamental properties, and inspection methods of dislocations in 4H-SiC epilayers. The mechanisms of dislocation nucleation, propagation, and conversion during epitaxial growth are presented. Furthermore, strategies to mitigate dislocations, with a particular focus on enhancing the efficiency of BPD-TED conversion, are comprehensively discussed. By offering insights into dislocation behavior in 4H-SiC epilayers, this review highlights the challenges and emerging directions in the study of dislocations.

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用于功率器件的 4H-SiC 外延层中的位错：识别、形成和调节

4H-SiC 在现代电子技术中大有可为，尤其是在高温、高频和大功率应用领域。然而，4H-SiC 外延层中位错的存在严重影响了基于 4H-SiC 的功率器件的性能和可靠性，从而限制了其广泛应用。本综述概述了 4H-SiC 表层中位错的分类、基本特性和检测方法。此外，还介绍了位错在外延生长过程中的成核、传播和转换机制。此外，还全面讨论了减少位错的策略，特别是提高 BPD-TED 转换效率的策略。通过对 4H-SiC 外延层中位错行为的深入分析，本综述强调了位错研究的挑战和新方向。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.