Effect of calcination temperature on CeO2-based catalysts with enhanced photocatalytic degradation of phenol under UV light

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2024-11-18 DOI:10.1016/j.mssp.2024.109123

L.A. Ramos-Huerta , Octavio Aguilar-Martínez , Yanet Piña-Pérez , Víctor Santes , Luis Lartundo Rojas , Francisco Tzompantzi , C.E. Santolalla-Vargas

{"title":"Effect of calcination temperature on CeO2-based catalysts with enhanced photocatalytic degradation of phenol under UV light","authors":"L.A. Ramos-Huerta , Octavio Aguilar-Martínez , Yanet Piña-Pérez , Víctor Santes , Luis Lartundo Rojas , Francisco Tzompantzi , C.E. Santolalla-Vargas","doi":"10.1016/j.mssp.2024.109123","DOIUrl":null,"url":null,"abstract":"<div><div>This research delves into the photocatalytic degradation of phenol using CeO<sub>2</sub> nanoparticles synthesized through solution combustion synthesis (SCS) at varying calcination temperatures (250, 300, 400, 500, and 600 °C). A comprehensive array of characterization techniques was employed, including XRD, FTIR, SEM-EDS, HR-TEM, N<sub>2</sub> physisorption, UV–Vis DRS, Raman spectroscopy, and XPS. Our findings reveal a profound influence of calcination temperatures on the presence and quantity of Ce<sup>3+</sup> and Ce<sup>4+</sup> species, thereby modulating defective sites and surface area, crucial factors impacting performance. CeO<sub>2</sub> synthesized at 400 °C stands out with a notable combination of high defects, extensive surface area, and a photocatalytic efficiency of 62 %. This work enhances our understanding of CeO<sub>2</sub> photocatalysts for environmental applications and emphasizes the superior performance of mild calcination temperatures in ceria materials.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109123"},"PeriodicalIF":4.2000,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800124010199","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

This research delves into the photocatalytic degradation of phenol using CeO₂ nanoparticles synthesized through solution combustion synthesis (SCS) at varying calcination temperatures (250, 300, 400, 500, and 600 °C). A comprehensive array of characterization techniques was employed, including XRD, FTIR, SEM-EDS, HR-TEM, N₂ physisorption, UV–Vis DRS, Raman spectroscopy, and XPS. Our findings reveal a profound influence of calcination temperatures on the presence and quantity of Ce³⁺ and Ce⁴⁺ species, thereby modulating defective sites and surface area, crucial factors impacting performance. CeO₂ synthesized at 400 °C stands out with a notable combination of high defects, extensive surface area, and a photocatalytic efficiency of 62 %. This work enhances our understanding of CeO₂ photocatalysts for environmental applications and emphasizes the superior performance of mild calcination temperatures in ceria materials.

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煅烧温度对紫外光下增强苯酚光催化降解的 CeO2 基催化剂的影响

本研究深入探讨了在不同煅烧温度（250、300、400、500 和 600 °C）下使用溶液燃烧合成（SCS）法合成的 CeO2 纳米粒子对苯酚的光催化降解。我们采用了一系列全面的表征技术，包括 XRD、FTIR、SEM-EDS、HR-TEM、N2 物理吸附、UV-Vis DRS、拉曼光谱和 XPS。我们的研究结果表明，煅烧温度对 Ce3+ 和 Ce4+ 物种的存在和数量有着深远的影响，从而改变了缺陷位点和表面积这些影响性能的关键因素。在 400 °C 下合成的 CeO2 具有高缺陷、大表面积和 62% 的光催化效率等显著特点。这项研究加深了我们对用于环境应用的 CeO2 光催化剂的了解，并强调了温和煅烧温度对铈材料的优越性能。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.