Comprehensive analysis of bulk and (001) surface properties of the quaternary Heusler compound CoTiFeGe

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2024-11-19 DOI:10.1016/j.mssp.2024.109120
M.Y. Raïâ, R. Masrour, M. Hamedoun, J. Kharbach, A. Rezzouk, N. Benzakour, K. Bouslykhane
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Abstract

The study investigates the CoTiFeGe quaternary Heusler alloy, focusing on its bulk structure with various ordering types and its (001) surface terminations of ∗CoFe and ∗TiGe. Employing density functional theory (DFT), researchers analyzed the material's properties. Calculations of elastic constants provided insights into the alloy's mechanical properties. Electronic structure analysis, specifically the density of states and band structure for XA-type ordering, revealed half-metallic characteristics. Using both GGA and mBJ-GGA methods, the study found band gaps of 0.490 eV and 0.982 eV, respectively, confirming the alloy's half-metallic nature. Surface analysis showed that the ∗CoFe-terminated (001) surface loses its half-metallic ferromagnetic character, while the ∗TiGe-terminated surface maintains complete spin polarization. This finding has significant implications for potential spintronic applications. Optical property investigations of both bulk and (001) surfaces supported the material's semiconducting nature. The primary optical reflections were observed in the visible and infrared regions, with minimal loss in the same spectral range. The presence of absorption in the (001) surface suggests potential applications in optoelectronics. Additionally, the research explored the alloy's thermoelectric properties by examining its transport coefficients.
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全面分析四元 Heusler 化合物 CoTiFeGe 的块体和 (001) 表面特性
该研究对 CoTiFeGe 四元 Heusler 合金进行了研究,重点是其具有各种有序类型的块体结构及其 ∗CoFe 和 ∗TiGe 的 (001) 表面终端。研究人员利用密度泛函理论(DFT)分析了这种材料的特性。通过对弹性常数的计算,研究人员深入了解了合金的机械性能。电子结构分析,特别是 XA 型有序的态密度和带结构,揭示了半金属特性。利用 GGA 和 mBJ-GGA 方法,研究发现带隙分别为 0.490 eV 和 0.982 eV,证实了合金的半金属性质。表面分析表明,以∗CoFe 结尾的 (001) 表面失去了半金属铁磁性,而以∗TiGe 结尾的表面则保持了完全的自旋极化。这一发现对潜在的自旋电子应用具有重要意义。对块体和(001)表面的光学特性研究证实了该材料的半导体性质。在可见光和红外区域观察到主要的光学反射,在相同光谱范围内的损耗极小。(001) 表面的吸收现象表明,该材料有可能应用于光电子领域。此外,研究还通过检测其传输系数,探索了合金的热电特性。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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