Room temperature lasing from InGaAs quantum well nanowires on silicon-on-insulator substrates

Abstract

In this work we demonstrate room temperature lasing from core-shell nanowires consisting of a radial InGaAs quantum well as the active material. The nanowires with the GaAs/InGaAs/InGaP quantum well structures are arranged in a deformed honeycomb lattice, forming a photonic crystal surface emitting laser (PCSEL). We demonstrate lasing from devices with three different nanowire diameters from undeformed, stretched, and compressed honeycomb lattices. Under optical pumping we show that the PCSEL lases at the wavelength of 966 nm (stretched pattern), with the lasing threshold of 103 μJ/cm2. The lasing wavelength increases as the nanowire diameter increases. Combining photoluminescence results and numerical simulations on the field profile and the quality factors of the devices, we establish that the lasing of the device is from the radial quantum well structure.