Creation of Two-Dimensional Electron Gas at the Heterointerface of CaZrO3/KTaO3 with Tunable Rashba Spin–Orbit Coupling

IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC ACS Applied Electronic Materials Pub Date : 2024-11-11 DOI:10.1021/acsaelm.4c0161810.1021/acsaelm.4c01618
Shaojin Qi, Jiexing Liang, Guimei Shi, Yulin Gan, Yuansha Chen*, Yunzhong Chen* and Jirong Sun*, 
{"title":"Creation of Two-Dimensional Electron Gas at the Heterointerface of CaZrO3/KTaO3 with Tunable Rashba Spin–Orbit Coupling","authors":"Shaojin Qi,&nbsp;Jiexing Liang,&nbsp;Guimei Shi,&nbsp;Yulin Gan,&nbsp;Yuansha Chen*,&nbsp;Yunzhong Chen* and Jirong Sun*,&nbsp;","doi":"10.1021/acsaelm.4c0161810.1021/acsaelm.4c01618","DOIUrl":null,"url":null,"abstract":"<p >Compared to SrTiO<sub>3</sub>-based 3d two-dimensional electron gases (2DEGs), KTaO<sub>3</sub>-based 5d 2DEGs have much more exceptional physical properties, such as a higher Curie temperature of spin-polarized 2DEG, higher <i>T</i><sub><i>c</i></sub> for the 2DEG at superconducting state, and larger spin–orbit coupling. Herein, the CaZrO<sub>3</sub> (CZO) films were deposited on KTaO<sub>3</sub> (001) substrates at the deposition temperature varied from 700 °C to room temperature, and the conductive CZO/KTO interface was obtained at all deposition temperatures. The conductivity of the CZO/KTO heterointerface exhibits critical dependence on the film thickness, where the critical thickness for conduction increases from 3.2 to 6 nm when decreasing the deposition temperature from 700 °C to room temperature. Moreover, the electric properties of the heterointerface grown at room temperature can be modulated strongly by the light illumination. The strength of the spin–orbit coupling exhibits large relative variation with the carrier density. Under the light illumination, the strength of the spin–orbit coupling increases from ∼3.9 × 10<sup>–12</sup> eV m to the maximum of ∼9 × 10<sup>–12</sup> eV m, with the maximal change of the carrier density of only 3 × 10<sup>12</sup> cm<sup>–2</sup>. The present work demonstrates an effective tuning of the special 5d-electron-based 2DEGs by light illumination, showing a feasible way for advanced optoelectronic device application.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8404–8412 8404–8412"},"PeriodicalIF":4.3000,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsaelm.4c01618","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Compared to SrTiO3-based 3d two-dimensional electron gases (2DEGs), KTaO3-based 5d 2DEGs have much more exceptional physical properties, such as a higher Curie temperature of spin-polarized 2DEG, higher Tc for the 2DEG at superconducting state, and larger spin–orbit coupling. Herein, the CaZrO3 (CZO) films were deposited on KTaO3 (001) substrates at the deposition temperature varied from 700 °C to room temperature, and the conductive CZO/KTO interface was obtained at all deposition temperatures. The conductivity of the CZO/KTO heterointerface exhibits critical dependence on the film thickness, where the critical thickness for conduction increases from 3.2 to 6 nm when decreasing the deposition temperature from 700 °C to room temperature. Moreover, the electric properties of the heterointerface grown at room temperature can be modulated strongly by the light illumination. The strength of the spin–orbit coupling exhibits large relative variation with the carrier density. Under the light illumination, the strength of the spin–orbit coupling increases from ∼3.9 × 10–12 eV m to the maximum of ∼9 × 10–12 eV m, with the maximal change of the carrier density of only 3 × 1012 cm–2. The present work demonstrates an effective tuning of the special 5d-electron-based 2DEGs by light illumination, showing a feasible way for advanced optoelectronic device application.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
利用可调谐的拉什巴自旋轨道耦合在 CaZrO3/KTaO3 异界面创建二维电子气体
与基于SrTiO3的三维二维电子气体(2DEG)相比,基于KTaO3的五维二维电子气体具有更优异的物理性质,例如自旋极化2DEG的居里温度更高、超导态2DEG的Tc更高以及自旋轨道耦合更大。本文在 KTaO3(001)基底上沉积了 CaZrO3(CZO)薄膜,沉积温度从 700 ℃ 到室温不等,在所有沉积温度下都获得了导电的 CZO/KTO 界面。CZO/KTO 异质界面的导电性与薄膜厚度呈临界关系,当沉积温度从 700 °C 降低到室温时,导电的临界厚度从 3.2 纳米增加到 6 纳米。此外,在室温下生长的异质表面的电学特性可受光照的强烈调制。自旋轨道耦合的强度随载流子密度的变化而呈现较大的相对变化。在光照下,自旋轨道耦合强度从 ∼3.9 × 10-12 eV m 增加到最大值 ∼9 × 10-12 eV m,而载流子密度的最大变化仅为 3 × 1012 cm-2。本研究成果证明了通过光照可以有效地调节基于 5d 电子的特殊二维电子元件,为先进光电器件的应用提供了一条可行的途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
期刊最新文献
What Sir William Battle Found: Observations Beyond his Sign. Brief Report: Increasing Intraverbal Responses to Subcategorical Questions via Tact and Match-to-Sample Instruction. Issue Editorial Masthead Issue Publication Information Efficient Synergy of Sea Urchin-like Graded Structure Supercapacitor Electrodes by Modulating the Morphology of Layered Double Hydroxide Composites
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1