Optical and electrical properties of GaSe thin films prepared by PECVD

IF 3.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Optical and Quantum Electronics Pub Date : 2024-11-26 DOI:10.1007/s11082-024-07905-3

Mikhail Kudryashov, Leonid Mochalov, Ekaterina Slapovskaya, Yuliya Kudryashova, Diana Fukina, Ruslan Kriukov

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Abstract

Gallium selenide (GaSe) thin films on sapphire (001) were first prepared by plasma enhanced chemical vapor deposition (PECVD), where high-purity elemental Ga and Se were used as starting materials. The nonequilibrium low-temperature RF discharge plasma (40.68 MHz) at reduced pressure (0.1 Torr) served to initiate chemical transformations. Gradual increase of the plasma discharge power while keeping other process parameters unchanged leads to an insignificant increase of gallium concentration in GaSe films. This results in a decrease in surface roughness and an increase in the value of the optical band gap of the films from 1.65 to 2.10 eV. All films consist of the δ-GaSe phase with average lattice parameters a = 3.77 Å and c = 32.10 Å. There is a tendency to form a texture oriented along the c axis with increasing plasma power. Conductivity of gallium selenide films showed an activation mechanism of charge transport. For the films deposited at 30, 50 and 70 W, the activation energies were about 0.5, 0.1 and 0.04 eV, respectively. The luminescent properties of GaSe thin films were also investigated.

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PECVD 法制备的 GaSe 薄膜的光学和电学特性

蓝宝石（001）上的硒化镓（GaSe）薄膜首先是通过等离子体增强化学气相沉积（PECVD）制备的，起始材料是高纯度元素镓和硒。非平衡低温射频放电等离子体（40.68 MHz）在减压（0.1 托）条件下启动化学转化。在保持其他工艺参数不变的情况下，等离子体放电功率逐渐增加，导致镓在硒化镓薄膜中的浓度显著增加。这导致表面粗糙度降低，薄膜的光带隙值从 1.65 eV 增加到 2.10 eV。所有薄膜都由平均晶格参数 a = 3.77 Å 和 c = 32.10 Å 的 δ-GaSe 相组成。硒化镓薄膜的电导率显示了电荷传输的活化机制。在 30、50 和 70 W 下沉积的薄膜，活化能分别约为 0.5、0.1 和 0.04 eV。此外，还研究了硒化镓薄膜的发光特性。

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来源期刊

Optical and Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.60

自引率

20.00%

发文量

810

审稿时长

3.8 months

期刊介绍： Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.