Spatial and reconfigurable control of photoluminescence from single-layer MoS2 using a strained VO2-based Fabry–Pérot cavity

Abstract

We investigated the photoluminescence (PL) from single-layer MoS2 on VO2 platelets grown on SiO2, where the insulating and metallic phases can coexist above a bulk transition temperature of 340 K, due to the inhomogeneous strain. We found that the intensity of PL from MoS2 on metallic VO2 is higher than that on the insulating counterpart, resulting in spatially varying PL even at the sub-micrometer scale. In contrast to the intensity, the PL peak energies were observed to be nearly identical on insulating and metallic VO2, indicating that the influences of charge transfer, strain, and dielectric screening on MoS2 are comparable, regardless of the phase state. Thus, the observed difference in PL intensity is due to the difference in refractive indices of insulating and metallic VO2, leading to the phase-dependent Fabry–Pérot interference effect. We performed numerical simulations for the emission from MoS2 supported on the VO2-based Fabry–Pérot interferometer. The calculated emission intensity ratio on insulating and metallic VO2 well reproduces the experimental observations. These results suggest a strategy for controlling PL from two-dimensional semiconductors in a spatial and reconfigurable manner.