1530 nm Electroluminescence from Metal–Semiconductor–Metal Structured Devices Based on Oxygen–Erbium Co-doped MoS2

Abstract

The 1530 nm emission of the Er intra-4f transition (⁴I_13/2 → ⁴I_15/2) is essential for telecom communication because it corresponds to the minimum-loss window of silica optical fibers. Herein, we develop a metal–semiconductor–metal structured light source based on O–Er co-doped MoS₂. The electroluminescence device exhibits the 1530 nm emission at low drive voltages (<5 V), which is beneficial from the impact excitation with the space–charge-limited conduction mechanism. The characteristic of symmetric structure allows the devices to exhibit consistent electrical and electroluminescence performance at positive and negative voltages. The O doping contributes to such high-current electrical behavior, and the Er doping leads to increased trap-filled-limited voltage due to increased trap density. This work lays the foundation for developing near-infrared light sources constructed with two-dimensional materials.