Enhanced Ferroelectricity and Reliability in Sub-6 nm Ferroelectric Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Film Compatible with BEOL Process

IF 4.3 3区材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC ACS Applied Electronic Materials Pub Date : 2024-11-13 DOI:10.1021/acsaelm.4c0174510.1021/acsaelm.4c01745

Yinchi Liu, Jining Yang, Hao Zhang, Dmitriy Anatolyevich Golosov, Chenjie Gu, Xiaohan Wu, Hongliang Lu, Lin Chen, Shijin Ding and Wenjun Liu*,

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Abstract

In this work, the back-end of line (BEOL) compatible sub-6 nm Hf_0.5Zr_0.5O₂/ZrO₂/Hf_0.5Zr_0.5O₂ (HZO/ZrO₂/HZO) stack and the corresponding capacitors were fabricated. The capacitor with the sub-6 nm HZO/ZrO₂/HZO stack annealed at 400 °C shows a superior remanent polarization (2P_r) of 26.3 μC/cm² under only ±1.25 V sweeping, while the conventional HZO film presents nonferroelectricity. The enhanced ferroelectricity stems from the increased ferroelectric phase proportion with ZrO₂ insertion. Moreover, the capacitor with a HZO/ZrO₂/HZO stack also achieved an excellent endurance with a 2P_r of 27.1 μC/cm² after 10¹¹ cycles without breakdown and only ∼12% 2P_r degradation at 85 °C. The robust reliability is ascribed to the suppressed generation of defects and domain pinning under the low operating voltage. The sub-6 nm HZO/ZrO₂/HZO stack presents great potential for BEOL compatible nonvolatile memories in advanced process nodes.

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与 BEOL 工艺兼容的亚 6 纳米铁电 Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 叠层薄膜的铁电性和可靠性得到增强

在这项工作中，制造出了兼容亚 6 纳米 Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 (HZO/ZrO2/HZO) 的线路后端 (BEOL) 堆栈和相应的电容器。在 400 °C 下退火的亚 6 nm HZO/ZrO2/HZO 叠层电容器在仅±1.25 V 的扫描条件下显示出 26.3 μC/cm2 的出色剩电极化 (2Pr)，而传统的 HZO 薄膜则显示出非铁电性。铁电性的增强源于插入 ZrO2 后铁电相比例的增加。此外，采用 HZO/ZrO2/HZO 叠层的电容器还实现了出色的耐久性，经过 1011 次循环后，2Pr 为 27.1 μC/cm2，没有发生击穿，在 85 °C 时 2Pr 退化率仅为∼12%。这种稳健的可靠性归功于低工作电压下缺陷的产生和畴钉的抑制。6 纳米以下的 HZO/ZrO2/HZO 堆栈为先进工艺节点中的 BEOL 兼容型非易失性存储器带来了巨大潜力。

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来源期刊

ACS Applied Electronic Materials Multiple-

CiteScore

7.20

自引率

4.30%

发文量

567

期刊介绍： ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/Abstracted： Web of Science SCIE Scopus CAS INSPEC Portico