{"title":"Self-powered photodetector with GeSe/WS2/MoS2 van der Waals heterojunctions","authors":"ZHANG Yongzhi, HE Xunjun","doi":"10.1016/j.sna.2024.116080","DOIUrl":null,"url":null,"abstract":"<div><div>Two-dimensional transition metal compounds and their heterojunction devices have been proven to have significant application value in the photodetector fields. With the deepening of energy-saving concepts, the self-powered photodetectors have undeniable advantages, including the requirement of no external power supply and strong environmental adaptability. However, most existing self-powered photodetectors suffer from the structure degradation, thereby resulting in slow response speed and low responsivity. Here, we report a self-powered GeSe/WS<sub>2</sub>/MoS<sub>2</sub> photodetector with vertical van der Waals heterojunctions prepared by mechanical exfoliation. Such unique structure can not only effectively avoid the performance degradation or even failure caused by GeSe oxidation but also exhibit sensitive anisotropy and high rectification ratio. In the self-powered mode, the experimentally fabricated device shows the switching ratio of 3.2×10<sup>3</sup>, the dark current of 1.1×10<sup>-13</sup>A, the responsivity of 14<!--> <!-->mA/W, the external quantum efficiency of 4.1%, the detectivity of 7.3×10<sup>8</sup> Jones, and rise and fall time of 2.4 ms and 5.2 ms, respectively. In continuous high-frequency switching, moreover, the device can also operate stably. Therefore, such multi-heterojunctions provide new ideas for the designs of multifunctional self-powered photodetectors.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"381 ","pages":"Article 116080"},"PeriodicalIF":4.1000,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators A-physical","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0924424724010744","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Two-dimensional transition metal compounds and their heterojunction devices have been proven to have significant application value in the photodetector fields. With the deepening of energy-saving concepts, the self-powered photodetectors have undeniable advantages, including the requirement of no external power supply and strong environmental adaptability. However, most existing self-powered photodetectors suffer from the structure degradation, thereby resulting in slow response speed and low responsivity. Here, we report a self-powered GeSe/WS2/MoS2 photodetector with vertical van der Waals heterojunctions prepared by mechanical exfoliation. Such unique structure can not only effectively avoid the performance degradation or even failure caused by GeSe oxidation but also exhibit sensitive anisotropy and high rectification ratio. In the self-powered mode, the experimentally fabricated device shows the switching ratio of 3.2×103, the dark current of 1.1×10-13A, the responsivity of 14 mA/W, the external quantum efficiency of 4.1%, the detectivity of 7.3×108 Jones, and rise and fall time of 2.4 ms and 5.2 ms, respectively. In continuous high-frequency switching, moreover, the device can also operate stably. Therefore, such multi-heterojunctions provide new ideas for the designs of multifunctional self-powered photodetectors.
期刊介绍：
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...
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