Interfaces in two-dimensional transistors: Key to pushing performance and integration

Abstract

Two-dimensional (2D) semiconductors have garnered significant interest due to their atomically thin structure that greatly enhances 'More Moore' dimensional scaling and facilitates the advancement of 'More than Moore' technologies. While 2D transistors hold the promise of unprecedented breakthroughs in atomic-limit device performance, their actual performance has frequently fallen short of expectations. This discrepancy primarily arises from the complex nature of the few critical interfaces (e.g., metal/semiconductor, dielectric/semiconductor) that constitute 2D transistors, and therefore achieving high-quality heterogeneous interfaces is a major challenge for 2D transistor performance and system integration. In this review, we summarize these interfaces and classify them into four types: 1) metal/semiconductor contact interfaces, 2) dielectric/2D channel interfaces, 3) surface and substrate interfaces, and 4) interfaces in wafer-scale integration. From the perspective of forming high-quality interfaces through compatible integration techniques, we analyze in detail the current challenges, development trends and future prospects of these interfaces and highlight their importance in driving the development and future manufacturing integration of 2D transistors. We also present insights into leveraging advanced interface modulation techniques to push the performance boundaries of 2D transistors. This review aims to direct attention to the pivotal role of 2D transistor interfaces, steering scientific research towards enabling the transition of 2D semiconductors from the 'lab to fab' and realizing their full potential.