Sobia Nisar , Ghulam Dastgeer , Muhammad Shahzad Zafar , Muhammad Wajid Zulfiqar , Amina Musarat , Iqra Rabani , Muhammad Zahir Iqbal
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引用次数: 0
Abstract
Two-dimensional semiconductor materials demonstrate interesting electronic and optoelectronic properties, which can be further modulated through chemical doping to control carrier concentration and enhance device performance. This study explores the doping process of a few-layer thin WSe2 using FeCl3 solution as a dopant. We perform a thorough characterization utilizing Raman analysis and electrical testing to validate the doping of WSe2. The investigations reveal the p-type doping effect and a notable rise in hole concentration, further elucidated via the energy band diagram. Additionally, the WSe2 field-effect transistor (FET) operation is investigated under illumination with light of different wavelengths ranging from 220 nm to 514 nm both before and after doping. Following p-type doping, the device exhibited a notable increase in current, indicative of improved performance in photodetection. The responsivity and external quantum efficiency (EQE) are improved significantly after doping. This research confirms the effectiveness of p-type doping in WSe2 and highlights its impact in enhancing the electronic and optoelectronic characteristics of WSe2 devices. The results underscore the potential for advancing electronic and optoelectronic applications through such enhancements.
期刊介绍:
Optical Materials has an open access mirror journal Optical Materials: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
The purpose of Optical Materials is to provide a means of communication and technology transfer between researchers who are interested in materials for potential device applications. The journal publishes original papers and review articles on the design, synthesis, characterisation and applications of optical materials.
OPTICAL MATERIALS focuses on:
• Optical Properties of Material Systems;
• The Materials Aspects of Optical Phenomena;
• The Materials Aspects of Devices and Applications.
Authors can submit separate research elements describing their data to Data in Brief and methods to Methods X.