Influence of H2 and O2 introduction during sputtering on In2O3-based transparent conductive films and HJT solar cells with copper electrode

IF 3.8 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Optical Materials Pub Date : 2024-11-19 DOI:10.1016/j.optmat.2024.116452
Guiming Meng , Guanghong Wang , Yuanbo Gong , Chenyu Zhu , Xiaoxia Zhao , Jingxuan Zhou , Caixia Wang , Shengzhi Xu , Hongbo Tian , Wei Wang , Lei Zhao , Ying Zhao , Xiaodan Zhang
{"title":"Influence of H2 and O2 introduction during sputtering on In2O3-based transparent conductive films and HJT solar cells with copper electrode","authors":"Guiming Meng ,&nbsp;Guanghong Wang ,&nbsp;Yuanbo Gong ,&nbsp;Chenyu Zhu ,&nbsp;Xiaoxia Zhao ,&nbsp;Jingxuan Zhou ,&nbsp;Caixia Wang ,&nbsp;Shengzhi Xu ,&nbsp;Hongbo Tian ,&nbsp;Wei Wang ,&nbsp;Lei Zhao ,&nbsp;Ying Zhao ,&nbsp;Xiaodan Zhang","doi":"10.1016/j.optmat.2024.116452","DOIUrl":null,"url":null,"abstract":"<div><div>The SnO<sub>2</sub>-doped In<sub>2</sub>O<sub>3</sub> (ITO) films with doping ratio of 90:10 and 97:3 and Zr, Ti and Ga-doped In<sub>2</sub>O<sub>3</sub> film (IXO) were prepared by DC magnetron sputtering. Hydrogen showed the different effect on properties of various In<sub>2</sub>O<sub>3</sub>-based transparent conductive oxide film (TCO). It enhanced the (222) preferential orientation growth of TCO films. The highest carrier mobility of the IXO films was 73.7 cm<sup>2</sup>/Vs. The lowest resistivity of the ITO (90:10 wt%) was 2.6x10<sup>−4</sup> Ω cm. The average transmittance of the ITO (90:10 wt%) was as high as 93.6 % under specific oxygen content in the wavelength range of 400–1100 nm. The optimized TCO films were selectively applied as the electrodes of the silicon heterojunction (HJT) solar cells. The highest conversion efficiency was 24.803 %. This work clarified the effect of oxygen and hydrogen content on the TCO films, which offers a valid guidance to prepare the high-efficiency HJT solar cells.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"158 ","pages":"Article 116452"},"PeriodicalIF":3.8000,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0925346724016355","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

The SnO2-doped In2O3 (ITO) films with doping ratio of 90:10 and 97:3 and Zr, Ti and Ga-doped In2O3 film (IXO) were prepared by DC magnetron sputtering. Hydrogen showed the different effect on properties of various In2O3-based transparent conductive oxide film (TCO). It enhanced the (222) preferential orientation growth of TCO films. The highest carrier mobility of the IXO films was 73.7 cm2/Vs. The lowest resistivity of the ITO (90:10 wt%) was 2.6x10−4 Ω cm. The average transmittance of the ITO (90:10 wt%) was as high as 93.6 % under specific oxygen content in the wavelength range of 400–1100 nm. The optimized TCO films were selectively applied as the electrodes of the silicon heterojunction (HJT) solar cells. The highest conversion efficiency was 24.803 %. This work clarified the effect of oxygen and hydrogen content on the TCO films, which offers a valid guidance to prepare the high-efficiency HJT solar cells.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
溅射过程中引入 H2 和 O2 对 In2O3 基透明导电薄膜和铜电极 HJT 太阳能电池的影响
采用直流磁控溅射法制备了掺杂比为 90:10 和 97:3 的二氧化锰掺杂 In2O3(ITO)薄膜以及掺杂 Zr、Ti 和 Ga 的 In2O3 薄膜(IXO)。氢气对各种基于 In2O3 的透明导电氧化物薄膜(TCO)的性能产生了不同的影响。氢气增强了 TCO 薄膜的(222)优先取向生长。IXO 薄膜的最高载流子迁移率为 73.7 cm2/Vs。ITO(90:10 wt%)的电阻率最低,为 2.6x10-4 Ω cm。在特定氧含量条件下,ITO(90:10 wt%)在 400-1100 纳米波长范围内的平均透射率高达 93.6%。优化后的 TCO 薄膜被选择性地用作硅异质结 (HJT) 太阳能电池的电极。最高转换效率为 24.803%。这项研究阐明了氧和氢含量对 TCO 薄膜的影响,为制备高效 HJT 太阳能电池提供了有效指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Optical Materials
Optical Materials 工程技术-材料科学:综合
CiteScore
6.60
自引率
12.80%
发文量
1265
审稿时长
38 days
期刊介绍: Optical Materials has an open access mirror journal Optical Materials: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review. The purpose of Optical Materials is to provide a means of communication and technology transfer between researchers who are interested in materials for potential device applications. The journal publishes original papers and review articles on the design, synthesis, characterisation and applications of optical materials. OPTICAL MATERIALS focuses on: • Optical Properties of Material Systems; • The Materials Aspects of Optical Phenomena; • The Materials Aspects of Devices and Applications. Authors can submit separate research elements describing their data to Data in Brief and methods to Methods X.
期刊最新文献
Investigation of physical properties of Mn doped lead phosphate glasses Bilayer structure niobium oxide/titanium oxide film with improved electrochromism Exploring optical, electronic and NLO properties: Growth and characterization of rubidium hydrogen (+)- tartrate crystals Experimental production and investigations of a new Cu–Al–Fe Schottky diode Temperature dependence of photoluminescence kinetics, scintillation properties, and coincidence time resolution of Mo co-doped Y1.5Gd1.5Al2Ga3O12:Ce (Mo = 0, 300, 600 ppm) multicomponent garnet crystals
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1