Heetae Kim;Seohak Park;Johak Jeong;Jihoon Jeon;Hoseok Lee;Chihun Sung;Jeho Na;Min Ju Kim;Seong Keun Kim;Sung-Yool Choi;Keun Heo;Sung Haeng Cho;Byung Jin Cho
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引用次数: 0
Abstract
In this study, we report the integration of an a-IGZO cell transistor and a high-k ZrO2 cell capacitor using Intense Pulsed Light (IPL) annealing for 1T-1C DRAM application. With IPL annealing, the ZrO2 capacitor can successfully achieve a high k-value of 33, without any detrimental effect to the electrical performance of the IGZO transistor which is vulnerable to high temperature process. The a-IGZO transistor could maintain an ultra-low leakage current of
$1.3\times 10^{-{16}}$
A/
$\mu $
m, even after the high-k dielectric crystallization process.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.